Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

Kim, Jungtaek; Lee, Sangyeop; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

doi:10.1016/j.ssc.2009.10.014

Cited by 14 publications

(8 citation statements)

References 12 publications

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“…where are the differences in the magnetic free energy density between the above two energy minima, defined as , which can be obtained by analyzing the hysteresis 31 37 at the directions. Here the ± sign in the formula correspond to CW and CCW rotations.…”

Section: Resultsmentioning

confidence: 99%

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Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Bac

Lee

et al. 2015

Sci Rep

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We report an observation of uniaxial magnetic anisotropy along the [100] crystallographic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate. As expected, planar Hall resistance (PHR) measurements reveal the presence of four in-plane magnetic easy axes, indicating the dominance of the cubic anisotropy in the film. However, systematic mapping of the PHR hysteresis loops observed during magnetization reversal at different field orientations shows that the easy axes along the and are not equivalent. Such breaking of the cubic symmetry can only be ascribed to the presence of uniaxial anisotropy along the direction of the Fe film. Analysis of the PHR data measured as a function of orientation of the applied magnetic field allowed us to quantify the magnitude of this uniaxial anisotropy field as Oe. Although this value is only 1.5% of cubic anisotropy field, its presence significantly changes the process of magnetization reversal, revealing the important role of the uniaxial anisotropy in Fe films. Breaking of the cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason for this unexpected behavior.

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Section: Resultsmentioning

confidence: 99%

“…(2) , where the only fitting parameter is . The detail process for this analysis is described in refs [ 31 , 37 ]. The best fitting of the PHR data with Eq.…”

Section: Resultsmentioning

confidence: 99%

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Bac

Lee

et al. 2015

Sci Rep

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“…To incorporate this into the analysis of the pinning field, a previously described process 14 can be followed with inclusion of the deviation angle of the magnetic easy axes from the ͗100͘ directions. To incorporate this into the analysis of the pinning field, a previously described process 14 can be followed with inclusion of the deviation angle of the magnetic easy axes from the ͗100͘ directions.…”

Section: B Domain Pinning Fieldsmentioning

confidence: 99%

Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga1−xMnxAs films

Lee¹,

Lee²,

Yoo³

et al. 2010

Journal of Applied Physics

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“…1(d), which reveal both the cubic anisotropy along the <100> directions and the uniaxial anisotropy along [110]. 24,25 Precise values of magnetic anisotropy parameters were obtained by analyzing the angular dependence of PHR based on magnetic free energy minima conditions. 26,27 The free energy diagrams for three temperatures are plotted in…”

Section: Introductionmentioning

confidence: 99%

“…CCW represent the domain pinning energies that occur in the CCW rotation when the current is positive and negative, respectively;25,31 and angles 1 and 2 indicate magnetization directions in the 2 nd and 3 rd quadrants before and after the transition across the[1 ̅ 10] barrier.…”

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Quantitative Determination of Spin-Orbit-Induced Magnetic Field in GaMnAs by Field-Scan Planar Hall Measurements

Park¹,

Lee²,

Lee³

et al. 2020

Preprint

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Spin-orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.

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Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

Cited by 14 publications

References 12 publications

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga1−xMnxAs films

Quantitative Determination of Spin-Orbit-Induced Magnetic Field in GaMnAs by Field-Scan Planar Hall Measurements

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