Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods

Lou, Shishu; Zhu, Huishi; Hu, Shaoxu; Zhao, Chunhua; Han, Peng

doi:10.1038/srep14084

Cited by 4 publications

(2 citation statements)

References 15 publications

(16 reference statements)

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“…L p was measured by the diffusion method described in [19], as well as by the method [20], including the measurement of the photocurrent depending on the absorption depth α -i at a constant intensity F in the region of the intrinsic absorption spectrum. Both methods give almost identical results.…”

Section: Resultsmentioning

confidence: 99%

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

Utamuradova,

Daliev,

Muzafarova

et al. 2023

East Eur. J. Phys.

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The process of diffusion of labeled copper atoms in p-CdTe<Pb> coarse-block films with a columnar grain structure has been studied. The CdTe<Pb> film is a p-type semiconductor, where an increase in the Pb concentration in the composition of the CdTe films increases the resistivity ρ of the structure. When the Pb concentration in CdTe changes from 1018 to 5·1019 cm-3, the hole concentration decreases by more than 3 orders of magnitude at a constant operating level depth of EV + (0.4 ± 0.02) eV. This may indicate that the concentration of acceptor defects, which are formed in the films due to self-compensation upon doping with a PbCd donor, exceeds the number of the latter. Electrical measurements by the Hall method were carried out at a direct current and a temperature of 300 K. As a result, an increase in the temperature of films on a Mo-p-CdTe<Pb> substrate during annealing affects the electrical parameter of charge carrier mobility µ, it decreases significantly. X-ray diffraction analysis showed that on the diffraction patterns of samples of p-CdTe<Pb> films, all available reflections correspond to the CdTe phase and up to х = 0.08 do not contain reflections of impurity phases and have a cubic modification. Based on the results of the calculation, it was established that the low values of the diffusion coefficient of Cu atoms are due to the formation of associates of the A type , which are directly dependent on the concentration of atoms. Diffusion length Ln and lifetime τn of minority current carriers in large-block p-type cadmium telluride films, which can also be controlled by introducing lead atoms into cadmium telluride.

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Section: Resultsmentioning

confidence: 99%

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

Utamuradova,

Daliev,

Muzafarova

et al. 2023

East Eur. J. Phys.

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“…22 Subsequent work showed that features incorporated into silicon solar cells to boost performance simultaneously increased light emission-a generalisation of Kirchhoff's law linking absorption and emission-with 1% 'wall-plug' efficiency demonstrated. 23 This soon led to the use of charge-coupled arrays to record high-resolution images of light emission over entire wafers, cells 15,16,24 and even modules, 25 techniques now almost universally used in research and manufacturing for diagnostics and characterisation. Extending measurements to fielded modules would greatly enhance benefits, particularly during commissioning, maintenance and troubleshooting.…”

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confidence: 99%

Luminescence imaging of solar modules in full sunlight using ultranarrow bandpass filters

Rey

Kunz

Green

et al. 2022

Progress in Photovoltaics

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Photovoltaic (PV) electricity generation is the fastest growing energy source globally and also humanity's best opportunity to achieve the urgently required deep decarbonisation of the energy sector. As PV enters the terawatt scale, with millions of modules in a single PV power plant, quality testing of installed PV modules becomes indispensable to guarantee PV as a reliable long-term source of electricity.We present a method that extends the use of photoluminescence (PL) imaging to field-deployed solar modules in full sunlight. The method takes advantage of sunlight absorption in the Earth's atmosphere in a narrow spectral range around 1,135-nm wavelength and recent developments in ultranarrow bandpass optical filter technology. The technical principles and experimental data are provided. This method lays the foundations for PL imaging, a powerful inspection method for the PV industry and research, to be applied to routine high-volume inspection of fielded PV modules on large-scale solar power plants.

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Three-dimensional model of a multicrystalline silicon ingot based on wafer photoluminescent images

Karabanov¹,

Belyakov²,

Serebryakov³

et al. 2022

SiliconPV 2021, the 11th International Conference on Crystalline Silicon Photovoltaics

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Investigation of diffusion length distribution on polycrystalline silicon wafers via photoluminescence methods

Cited by 4 publications

References 15 publications

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

Luminescence imaging of solar modules in full sunlight using ultranarrow bandpass filters

Three-dimensional model of a multicrystalline silicon ingot based on wafer photoluminescent images

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