Investigation of defects dependence of local piezoelectric response on Fe, La-modified (Pb,Sr)TiO3 thin films: A piezoresponse force microscopy study

Abstract

h i g h l i g h t s g r a p h i c a l a b s t r a c t The Fe, La co-doping (Pb,Sr)TiO 3 films are fabricated by sol-gel like method. The defect dipoles can be reorient under an PFM tip-bias-induced electric field. The Fe, La co-doping (Pb,Sr)TiO 3 films behaved like ferroelectric at the nanoscale. a b s t r a c t In this study, undoped-(Pb,Sr)TiO 3 and Fe 3þ , La 3þ co-doped (Pb,Sr)TiO 3 thin films were investigated at the nanoscale level by piezoresponse force microscopy (PFM), in order to evaluate the impact of dopinginduced damages on the ferroelectric and piezoelectric properties. Detailed investigations with nanoscale resolution have revealed occurrence of abnormal domains in writing pattern under forward and reverse bias for (Pb,Sr,La)(Ti,Fe)O 3 thin films. Further piezoresponse hysteresis loop measurements show that fully switchable loops were observed under high voltage mediated by defect dipoles and by "ferroelectric-like" polar defects clusters. They have been discussed taking into account charged defect formation with both local changes in the dipole moment and local symmetry breaking effects. In addition, the domain writing and its retention behavior of the undoped-PST and (Pb,Sr,La)(Ti,Fe)O 3 thin films were investigated. Undoped-PST films exhibited better stability for both positive and negative domains for a relatively long time in comparison to that observed for (Pb,Sr,La)(Ti,Fe)O 3 films.

On the coexistence of ferroelectric and antiferroelectric polymorphs in NaNbO3 fibers at room temperature

“…16,25 Piezoresponse force microscopy (PFM) is a powerful tool for investigating the ferroelectricity of bulk materials, as well as materials at the nanoscale level (nanostructures and thin films). [26][27][28][29][30][31] In the last few decades, PFM has allowed comprehensive studies on the processes of electrical polarization and wall dynamics of the ferroelectric domains, 32,33 switching of polarization and nucleation domains, 34,35 and the behavior of ferroelectric properties with different parameters in the preparation of materials. [36][37][38] Thus, in this context, this work is a thorough study of the structure of one-dimensional NaNbO 3 based on a set of experimental characterization techniques and an atomistic computational approach.…”

Colossal Permittivity Characteristics and Origin of (Sr, Sb) Co-Doped TiO2 Ceramics

“…[3][4][5] Materials with dielectric constants higher than 10 4 are called colossal permittivity (CP) materials. The following types of high dielectric materials have been discovered and studied in the past few decades, including BaTiO 3 (BTO), 6 CaCu 3 Ti 4 O 12 (CCTO), 7,8 NiO, 9 (Pb, La)TiO 3 10 and AFe 0.5 B 0.5 O 3 (A = Ba, Sr, Ca; B = Nb, Ta, Sb). 11,12 BaTiO 3 high dielectric material will undergo obvious phase transition near Curie temperature, resulting in poor temperature and frequency stability of this material, which is not conducive to its large-scale application.…”