Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Felix, Jorlandio F.; Aziz, Mohsin; Cunha, Diego Leite da; Seidel, Keli Fabiana; Hümmelgen, Ivo A.; Azevêdo, W.M. de; Jr, E. F. da Silva; Taylor, David; Henini, M.

doi:10.1063/1.4733569

Cited by 14 publications

(9 citation statements)

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“…4 GaAs substrate is greater than that of SPAN grown on (100) and (311)A GaAs substrates. This value is also greater than the value reported by Felix et al [37] for SPAN/4H-SiC hybrid devices. In addition, the ideality factor at room temperature is determined to be 1.77 for the SPAN/(100) GaAs, 1.63 for SPAN/(311)A GaAs and 1.61…”

Section: Current-voltage Characteristicscontrasting

confidence: 53%

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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This article reports the effect of n-type GaAs substrate orientation, namely (100), IntroductionEssentially conducting polymers, such as polyaniline (PANI), sulfonated polyaniline (SPAN), poly(p-phenylene-vinylene), polypyrrole, polyacetylene, polythiophene, etc., are promising semiconductors materials with confirmed technological potential due to their unique optical and electrical properties [1]. Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8] As it is well known, the crystallographic orientation of the substrate has a significant effect on incorporation of impurities and defects and consequently on optical and electronic properties of III-V materials [28]. The ideality factor n and barrier height (BH) as well as the electrical characteristics are fundamental parameters of a Schottky barrier diode (SBD) and these give an indication about the quality of the Schottky interface. The SBD parameters must be determined over a broad range of temperatures because the analysis of the current-voltage (I-V) characteristics of the SBD measured only at room temperature does not provide accurate information about the conduction mechanism and the barrier nature created at metal semiconductor interface in order to understand these phenomena and determine precisely the parameters of the Schottky diodes. Chand et al. [29] and Hardikar et al.[30] analysed the experimental currentvoltage data which revealed that there is an increase in the ideality factor and a decrease in the zero-bias barrier height with decreasing temperature. Consequently, the ideality factor and the barrier height established from forward I-V characteristics are found to be temperature dependent. This confirms that the Schottky barrier height is inhomogeneous in nature at the interface. This behaviour has been successfully described on the basis of the thermionic emission mechanism with Gaussian distribution of the barrier heightTo fabricate a hybrid organic/inorganic semiconductor heterojunction device with the aim to obtain specific optical and electrical properties on the bases of their doping levels, a thin organic film is deposited onto the surface of a conventional inorganic semiconductor substrate. This can be done by simple and inexpensive methods such as 4 spin coating used for thin film deposition at room temperature. Recently, a new technique of SPAN films preparation has been developed by Yang et al. [32].In this paper, we report on the fabrication and electrical characterization of Au/SPAN/GaAs heterojunctions grown on three different substrate orientations, namely n-type GaAs (100), (311)A and (311)B. We have investigated the effect of the substrate orientation on the heterojunction parameters ...

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Section: Current-voltage Characteristicscontrasting

confidence: 53%

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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“…INTRODUCTION Silicon carbide (SiC) is a well-known material due to its extraordinary mechanical and physical properties, such as hardness, abrasive wear resistance, chemical inert, and high thermal conductivity. [1][2][3] Wide-band gap semiconductors based devices, such as SiC and GaN semiconductors, have been an important subject to researchers. It is well known that SiC has $3.25 eV band gap, high thermal conductivity (4.9 X/cm K), high electron velocity (2 Â 10 7 cm/s), high electric field (2.2 Â 10 6 V/cm), and high breakdown electric field (4 Â 10 6 V/cm).…”

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confidence: 99%

Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Alialy

Altındal

Tanrıkulu

et al. 2014

Journal of Applied Physics

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Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metalinsulator-semiconductor Schottky diodes Fabrication and properties of metal/ferroelectrics/semiconductor diodes on 4H-SiC Appl.In order to determine the effective current-conduction mechanisms in Au/TiO 2 /n-4H-SiC (metalinsulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the temperature range of 200-380 K. Some electrical parameters, such as ideality factor (n), zero-bias barrier height (BH) (U Bo ), series and shunt resistances (R s , R sh ), were obtained as 5.09, 0.81 eV, 37.43 X, and 435 kX at 200 K and 2.68, 0.95 eV, 5.99 X, and 73 kX at 380 K, respectively. The energy density distribution profile of surface states (N ss ) was extracted from the forward-bias I-V data by taking into account voltage dependent of the ideality factor (n V ), effective BH (U e ), and R s for 200, 300, and 380 K. The Ln(I) vs V plots are completely parallel in the intermediate bias voltages, which may be well explained by field emission (FE) mechanism for each temperature. On the other hand, the high value of n cannot be explained with this mechanism. Therefore, to explain the change in BH and n with temperature, U Bo vs q/2kT plot was drawn to obtain an evidence of a Gaussian distribution (GD) of the BHs and thus the mean value of BH ( U Bo ) and standard deviation (r so ) values were found from this plot as 1.396 eV and 0.176 V, respectively. The U Bo and Richardson constant (A*) values were found as 1.393 eV and 145.5 A.cm À2 K À2 using modified Ln(I o /T 2 )-(q 2 r s 2 /2k 2 T 2 ) vs q/kT plot, respectively. It is clear that all of the obtained main electrical parameters were found as a strong function of temperature. These results indicated that the current conduction mechanism in Au/TiO 2 /n-4 H-SiC (SBD) well obey the FE and GD mechanism rather than other mechanisms. V C 2014 AIP Publishing LLC.

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“…The values of U Bo , σ so and voltage coefficients ρ 2 , ρ 3 should obey Equations (9) and (10), respectively. Both Φ Bo and (n −1 -1) vs. q/2kT plots are given in Figures 9 and 10, respectively.…”

Section: Philosophical Magazine 1457mentioning

confidence: 99%

“…These mechanisms include thermionic emission (TE), thermionic field emission (TFE), field emission (FE), generation-recombination (GR) and tunnelling via interface states or traps. The quality and performance of these devices are dependent on various parameters such as temperature, applied bias voltage or electric field, the surface process, interfacial layer native or deposited at MIS interface, the magnitude of doping concentration atoms (acceptor or donor), series and shunt resistances (R s and R sh ) of diode, interface traps (D it ), the formation of BH and its homogeneity [8][9][10][11][12][13]. The analysis of a device measured only at room temperature or over a narrow range of temperatures cannot yield detailed information on the conduction mechanism and the nature of BH at the M/S interface.…”

Section: Introductionmentioning

confidence: 99%

“…Although there are many studies both theoretical and experimental on these devices, their conduction mechanisms and the formation of barrier height (BH) at MIS interface have not been clarified yet [1][2][3][4][5][6][7][8][9]. At any specific, especially low-temperature and -voltage, interval several conduction mechanisms can be individually dominating or collectively operative.…”

Section: Introductionmentioning

confidence: 99%

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Electronic transport of Au/(Ca_1.9Pr_0.1Co₄O_x)/n-Si structures analysed over a wide temperature range

Alialy

Kaya

Marıl

et al. 2015

Philosophical Magazine

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Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Cited by 14 publications

References 50 publications

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Electronic transport of Au/(Ca_1.9Pr_0.1Co₄O_x)/n-Si structures analysed over a wide temperature range

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Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Cited by 14 publications

References 50 publications

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes

Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

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Electronic transport of Au/(Ca_1.9Pr_0.1Co₄O_x)/n-Si structures analysed over a wide temperature range