2023
DOI: 10.1088/1361-6668/acf24a
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Investigation of dark count rate in NbRe microstrips for single photon detection

P Ercolano,
C Cirillo,
M Ejrnaes
et al.

Abstract: Superconducting microstrip single photon detectors (SMSPDs) received great interest since they are expected to combine the excellent performance of superconducting nanostrip single photon detectors (SNSPDs) with the possibility to cover large active areas using low-cost fabrication techniques. In this work, we fabricated SMSPDs based on NbRe to investigate the role of vortices in the dark counts events in this innovative material and in devices with micrometer size. We realized devices with different layouts, … Show more

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Cited by 4 publications
(2 citation statements)
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“…By utilizing these values along with ΞΎ, we determine parameters such as the thermodynamic critical field that can be relevant for the application of NbTi films as coatings for SRF cavities [32,35,36]. Moreover, the development of ultra-thin films can be crucial for devices like superconducting nanowire single-photon detectors based on Nbbased systems [17,41,42]. The presented results also indicate that NbTi films preserve their interesting properties when deposited at room temperature and on flexible substrates.…”
Section: Resultsmentioning
confidence: 86%
“…By utilizing these values along with ΞΎ, we determine parameters such as the thermodynamic critical field that can be relevant for the application of NbTi films as coatings for SRF cavities [32,35,36]. Moreover, the development of ultra-thin films can be crucial for devices like superconducting nanowire single-photon detectors based on Nbbased systems [17,41,42]. The presented results also indicate that NbTi films preserve their interesting properties when deposited at room temperature and on flexible substrates.…”
Section: Resultsmentioning
confidence: 86%
“…In table 1, we reported the value of critical and setpoint currents, and both DCR and efficiency measured at the setpoint current. The setpoint current has been chosen in an interval far from the region where DCR increase exponentially due to the intrinsic contribution [14][15] [16] and where the efficiency is stable, almost at its maximum. System Detection Efficiency (SDE) was calculated as (𝑃𝐢𝑅 βˆ’ 𝐷𝐢𝑅)/𝛀 π‘β„Žπ‘  , for all the detectors.…”
Section: Detector Characterizationmentioning
confidence: 99%