2015
DOI: 10.1016/j.mssp.2015.06.031
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Investigation of characteristics of ZnO:Ga nanocrystalline thin films with varying dopant content

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Cited by 58 publications
(15 citation statements)
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“…1). Also, the dislocation density and the residual stress tend to raise Fe doping of ZnO, hence this case may indicate biaxial stress which is a very important factor in the formation of dislocation densities and which is consistent with other results on doping of ZnO films [22,45,50]. From calculated data for the texture coefficient, it can be concluded that the degree of orientation of the (002) plane increases with Fe doping (see Table S1).…”
Section: Structural Investigations Of the Zno And Zno:fe Nanostructursupporting
confidence: 88%
See 2 more Smart Citations
“…1). Also, the dislocation density and the residual stress tend to raise Fe doping of ZnO, hence this case may indicate biaxial stress which is a very important factor in the formation of dislocation densities and which is consistent with other results on doping of ZnO films [22,45,50]. From calculated data for the texture coefficient, it can be concluded that the degree of orientation of the (002) plane increases with Fe doping (see Table S1).…”
Section: Structural Investigations Of the Zno And Zno:fe Nanostructursupporting
confidence: 88%
“…From calculated data for the texture coefficient, it can be concluded that the degree of orientation of the (002) plane increases with Fe doping (see Table S1). The slight increase of the parameters a and c in our samples is caused by incorporation of Fe 3 þ ions with different ionic radii [22,33,35,45,50,51].…”
Section: Structural Investigations Of the Zno And Zno:fe Nanostructurmentioning
confidence: 77%
See 1 more Smart Citation
“…Zinc oxide (ZnO), as one of the most important functional semiconductor oxide nanostructures, has a single crystal phase which crystallizes in the hexagonal wurtzite struc-ture (WZ) with lattice parameters: a = 0.3249 nm, c = 0.5206 nm; belonging to the space group P63mc, and is characterized by two interconnecting sublattices of Zn 2+ and O 2− , such that each Zn ions is surrounded by a tetrahedral of O ions, and vice-versa [1][2][3][4]. Transparent conducting oxides (n-TCO) materials like ZnO based thin films have gained much interest in science and technology.…”
Section: Introductionmentioning
confidence: 99%
“…They are usually prepared on glass substrates for opto-electrical devices because of its low resistivity, high optical transparency, good optical gap energy, as well as excellent adhesion to substrates and chemical stability. Due to the excellent structural and optical properties of doped films, ZnO has been used in a wide variety of applications such as transparent electrodes, ferromagnetism, semiconductors, piezoelectric, optoelectronic, solar cells, spintronics and nanodevices [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. ZnO is one of the most important binary II-VI semiconductor compounds is a natural n-type electrical conductor with a direct energy wide band gap of 3.37 eV at room temperature, a large exciton binding energy (60 meV) [17,18].…”
Section: Introductionmentioning
confidence: 99%