Investigation of catalyst-assisted growth of nonpolar GaN nanowires<i>via</i>a modified HVPE process

Zhang, Cai; Liu, Xiaoyuan; Li, Jing; Zhang, Xinglai; Yang, Wenjing; Jin, Xin; Liu, Fei; Yao, Jinlei; Jiang, Xin; Liu, Baodan

doi:10.1039/c9nr09781c

Cited by 6 publications

(6 citation statements)

References 54 publications

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“…It is mainly attributed to be the formation of a rich surface state and oxygen defect levels of the assynthesized 2D GaN crystal, which suppresses the radiative recombination of photogenerated electrons and holes near the band edge. 32 The optoelectronic properties of the 2D GaN crystal were further investigated by a fabricated prototypical device, as shown in Figure S10a. The characteristic I−V curve under the dark condition (Figure S10b) also reveals that the 2D GaN crystal has a high dark current and carrier concentration caused by the shallow donor levels of defects, as depicted from the PL spectrum.…”

Section: Resultsmentioning

confidence: 96%

“…Instead, the intrinsic band edge emission peak at 365 nm is not observed. It is mainly attributed to be the formation of a rich surface state and oxygen defect levels of the as-synthesized 2D GaN crystal, which suppresses the radiative recombination of photogenerated electrons and holes near the band edge . The optoelectronic properties of the 2D GaN crystal were further investigated by a fabricated prototypical device, as shown in Figure S10a.…”

Section: Resultsmentioning

confidence: 99%

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Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Zhang

Yang

et al. 2021

Chem. Mater.

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Two-dimensional (2D) nanostructures are mainly confined to being obtained from intrinsically layered crystals via an exfoliation approach or epitaxial growth method, thereby greatly limiting the choice of 2D crystals available for high-performance optoelectronic devices. Here, we introduce an efficient PDMS printing strategy to simultaneously realize the controllable preparation and subsequent transfer of a large-area non-layered 2D Ga2O3 amorphous layer on the basis of ultrathin oxide skin of liquid Ga. More importantly, a template-confined reaction of the 2D Ga2O3 amorphous layer is further proposed to achieve other 2D Ga-group crystals including 2D GaN, GaS, and GaP thin layers. The corresponding crystallization and transformation process under the 2D geometrical space is investigated and demonstrated to be polycrystalline nucleation and growth, which still follows the traditional thermodynamic nucleation rule of critical radius. Furthermore, 2D Ga-group semiconductors could easily stack with themselves or other layered 2D crystals such as MoS2 to construct diverse van der Waals heterostructures for the fabrication of high-performance and multifunctional electronics. We believe that the unique and simple synthetic strategy proposed in this work will promote the preparation and transfer of diverse non-layered 2D crystals for the discovery of new phenomena and functional nanodevices.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Zhang

Yang

et al. 2021

Chem. Mater.

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“…These metallic particles may result in the formation of unavoidable defects and thus lead to negative effects on optical and electronic properties of the as-grown nanowires, which has been proven by several research groups. [87][88][89][90][91] For example, Karakostas et al compared GaN nanowires grown by either catalyst-free or catalyst-induced methods utilizing Ni seeds and found that the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is much weaker in comparison to that of the nanowires synthesized by the catalyst-free route (Figure 2i). [92] A more critical problem is the incorporation of metallic particles within nanowires that typically causes detrimental impacts on device performance.…”

Section: Synthesis and Growth Of Bottom-up Nanowiresmentioning

confidence: 99%

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

et al. 2020

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Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III‐nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom‐up and top‐down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast‐emerging research field.

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“…Ning et al clearly demonstrated the blue shift of UV emission, peak narrowing, and enhanced luminescence delay (350–390 nm spectral window) of a -axis GaN nanowires against c -axis GaN nanowires . We have also developed a modified hydride vapor phase epitaxy process to synthesize nonpolar GaN nanowires with a triangular cross section . Compared with the widespread study of c -axis polar GaN nanowires, nonpolar GaN nanowires are rarely reported due to their difficult synthesis. , To date, obtaining nonpolar GaN nanowires mainly relies on the complicated MOCVD process or the time-consuming cutting of c -axis GaN bulk crystals along its a / m plane. , Moreover, a foreign substrate is normally required for the nucleation and heteroepitaxial growth of polar/nonpolar GaN crystals, which also brings some stacking faults and structural strain due to their lattice mismatch .…”

Section: Introductionmentioning

confidence: 99%

Self-Nucleated Nonpolar GaN Nanowires with Strong and Enhanced UV Luminescence

Liu

Yang

et al. 2022

Crystal Growth & Design

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Compared with polar c-axis GaN, nonpolar GaN crystals with different orientations show distinct optical and electrical properties and thus some promising and functional applications can be expected. In this work, we report the self-assembled nucleation and synthesis of nonpolar GaN nanowires through a conventional chemical vapor deposition approach and systematic investigation of their microstructures and crystallography using a high-resolution transmission electron microscope. Comparative optical studies on polar and nonpolar GaN nanowires using monochromic and spatially resolved cathodoluminescence spectroscopy demonstrate that nonpolar GaN nanowires show strong UV luminescence, and an obvious blue shift of the peak wavelength along the nanowire from the bottom to the top is observed, while the yellow band emission observed in polar GaN nanowires is not detected. The feasible synthetic strategy and the peculiar luminescence property of nonpolar GaN nanowires will provide predominant advantages and sufficient space for the fabrication of highperformance and high-efficiency optoelectronic nanodevices for functional applications.

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Investigation of catalyst-assisted growth of nonpolar GaN nanowiresviaa modified HVPE process

Abstract: Catalyst-assisted nonpolar GaN nanowires with a triangular cross section have been synthesized using a modified HVPE process.

Cited by 6 publications

References 54 publications

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Self-Nucleated Nonpolar GaN Nanowires with Strong and Enhanced UV Luminescence

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