Investigation of aluminium bondpad metal peeling failure

Younan, Hua; Shirley, P.; Chonh, Kee Sze; Redkar, S.

doi:10.1109/smelec.2002.1217804

Cited by 1 publication

(2 citation statements)

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“…IN authors' previous paper, we presented a bondpad metal peeling case due to contamination and poor adhesion between the peeling layers [1]. In this paper, we will present a bondpad peeling case due to underetch in wafer fabrication.…”

Section: Introductionmentioning

confidence: 97%

“…II Auger survey range was 30-2030 eV. The relative atomic concentration of the detected elements were calculated by first measuring elemental peak-to-peak heights of Auger spectrums in the survey scans and then applying sensitivity factors based on standard spectra of pure elements or selected compounds: (1) Where Ii is the peak-to-peak amplitude of the element i from the test specimen, Istd is the peakto-peak amplitude of the element i from the standard, Si is the relative sensitivity factor and D-is a relative scale factor between the spectra for the test specimen and standard.…”

Section: Introductionmentioning

confidence: 99%

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Failure analysis of bondpads peeling problem in 0.13 /spl mu/m copper process in wafer fabrication

Younan¹,

Rao²,

Wang³

et al. 2004

2004 IEEE International Conference on Semiconductor Electronics

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A bondpad peeling case due to passivation residue is presented for 0.13 um copper process in wafer fabrication (fab). It was reported that some dies from two lots of wafers failed die-pull and die shear test at the assembly house. SEM, Auger and TEM techniques were used to identify the root cause. Based on failure analysis and wafer fab investigation results, it is concluded that the peeling occurred between the barrier metal Ta and Cu layers. The root cause of the metal peeling was due to an extra thin Si3N4 layer between the barrier Ta and Cu layers, which could be due to passivation underetch or Nitrogen flow issue during passivation layer deposition.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%