Investigation of ALD HfSiOx as gate dielectric on β-Ga2O3 (001)
Xin Zhai,
Zhuoqun Wen,
Oguz Odabasi
et al.
Abstract:The interface and bulk properties of ∼20 nm hafnium-silicon-oxide (HfSiOx) dielectric deposited by atomic layer deposition (ALD) on (001) β-Ga2O3 were investigated systematically using deep ultraviolet photo-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements. The ALD HfSiOx dielectric constant, bulk, and HfSiOx/Ga2O3 interface quality and breakdown field were determined, and the impact of post-deposition annealing (PDA) on these parameters was studied. PDA reduced near-interface traps re… Show more
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