Investigation of ablation mechanisms for selective laser ablation of silicon nitride layers

Heinrich, G.; Bähr, M.; Stolberg, Klaus; Wütherich, T.; Leonhardt, M.; Lawerenz, A.

doi:10.1016/j.egypro.2011.06.188

Cited by 32 publications

(14 citation statements)

References 8 publications

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“…Consequently, a shorter wavelength, i.e., UV radiation, results in a lower fluence needed to damage the film. This effect has been observed recently for the ablation of PECVD SiNx layers on silicon with ps-laser pulses at different wavelengths [29] [38]. On the other hand, the different pulse duration for a given wavelength could also influence the measured threshold fluences.…”

Section: Nm/ps-pulsedsupporting

confidence: 52%

“…Of course, an adequate pulse repetition frequency and pulse overlap are necessary if more than a single pulse is required to process the target area [27] [28]. Different effects have been studied for thin metal, dielectrics, polymers and transparent conductive films as a function of wavelength [29], pulse duration, beam radius [22], number of pulses [30] and pulse repetition rate [31].…”

Section: Introductionmentioning

confidence: 99%

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Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films

Molpeceres

Morales

Muñoz-García

et al. 2023

Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII

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In this paper, we present a study of the laser scribing of WO x , VO x , and MoO x films, deposited onto crystalline silicon, with three different wavelengths (355 nm, 532 nm, and 1064 nm) and in two temporal regimes in pulse width, picosecond and nanosecond. For each case, we measure the fluence threshold to remove the transition metal oxides (TMO) film and the fluence threshold to induce damage in the crystalline silicon substrate. The relation between the process parameters and the morphological changes produced in the oxide films is also analysed. The selection of the proper laser source allows a wide parametric window, leading to the complete removal of the TMO films without alteration of the crystalline silicon substrate. Morphological changes of the ablated regions were characterized through confocal microscopy and the relationships between the dimensions of the craters and the ablation parameters were analyzed.Finally, we present results on the isolation of diodes and their electrical characteristics, showing the quality of the laser scribing processes.

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Section: Nm/ps-pulsedsupporting

confidence: 52%

Section: Introductionmentioning

confidence: 99%

Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films

Molpeceres

Morales

Muñoz-García

et al. 2023

Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII

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“…Since heat transfer from the Si substrate is generally not expected to induce volatilization of thermally stable ARC layers, other mechanisms must be considered. For example, the laser heating can produce a Si vaporization and pressure burst sufficient to lift off the overlying ARC [4,5,6] although stress blistering mechanisms (without Si vaporization) also appear possible [7].…”

Section: Motivation and Backgroundmentioning

confidence: 97%

Mechanisms of lifetime degradation in Si/ARC samples patterned by laser lift-off

Saenger¹

2012

SPIE Proceedings

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Applications for laser patterning in Si photovoltaics include (i) patterning SiO 2 or SiN layers with openings for local contacts and (ii) laser-doped selective emitter (LDSE) processes, in which the contact open is accompanied by the diffusion of dopants into a locally melted Si area. While contact open processes are best performed with UV wavelengths that can be strongly absorbed by the SiN or SiO 2 (allowing layer ablation with a minimum of Si heating), the Si melt depth required by LDSE requires irradiation at longer laser wavelengths where these antireflection coatings (ARCs) no longer absorb well. An optimized LDSE process must thus produce Si melting as well as the least amount of Si vaporization sufficient to lift off the overlying ARC. In this work, we investigate the mechanisms for lifetime degradation in Si(p-type, 100-oriented)/ARC samples resulting from 20 ns pulsed laser irradiation at 532 nm at fluences near the threshold for ARC removal. To differentiate between lifetime degradation induced by changes in the passivation layer vs. changes in the Si itself, samples were lifetime mapped after patterned laser irradiation and then again after a wet ARC strip and repassivation. Samples with ARCs of thermal SiO 2 and PECVD SiN typically showed some residual Si damage after irradiation at fluences sufficient for contact open. Interestingly, irradiation of the SiO 2 samples at lower fluences, between the threshold for Si melting and ARC removal, showed damage to the SiO 2 passivation, but no residual Si damage. Explanations for these observations and related results will be discussed.

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“…It is therefore important to precisely adjust the laser energy through optimizations of laser process parameters. Usually, laser tools using ultra-short pulse duration in pico-second range are most promising to achieve this goal due to less thermal-induced heating, melting and debris around regions [7,83,[130][131][132][133][134][135]. Recent research results indicated that nano-second laser can successfully achieve this goal as well via process optimization [82,130,[134][135][136][137].…”

Section: Lbsf and Rear Local Contactmentioning

confidence: 99%

Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Huang

Modanese

Sun

et al. 2018

Solar Energy Materials and Solar Cells

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Investigation of ablation mechanisms for selective laser ablation of silicon nitride layers

Cited by 32 publications

References 8 publications

Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films

Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films

Mechanisms of lifetime degradation in Si/ARC samples patterned by laser lift-off

Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

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