Investigation of a versatile pulsed laser source based on a diode seed and ultra-high gain bounce geometry amplifiers

Teppitaksak, Achaya; Thomas, G. M.; Damzen, M. J.

doi:10.1364/oe.23.012328

Cited by 8 publications

(4 citation statements)

References 23 publications

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“…Although the shortest pulses have been longer than that of the ML semiconductor lasers, the flexibility of the pulse shaping and also repetition rate and their high robustness are their unique strength [13][14][15] . In particular, gainswitched semiconductor lasers combined with rare-earth-doped fibre linear amplifiers in a master-oscillator-power-amplifier configuration have significant advantages because of the highly controllable optical pulses, such as variable repetition rate, arbitrary timing operation, flexible pulse duration, waveform spectral control and synchronization to electrical triggers, in addition to the robustness and stability [16][17][18][19][20] . It was recently reported that additional non-linear pulse shaping in optical fibres can generate femtosecond pulses 21,22 .…”

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confidence: 99%

Femtosecond pulse generation beyond photon lifetime limit in gain-switched semiconductor lasers

et al. 2018

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Femtosecond semiconductor lasers are ideal devices to provide the ultrashort pulses for industrial and biomedical use because of their robustness, stability, compactness and potential low cost. In particular, gain-switched semiconductor lasers have significant advantages of flexible pulse shaping and repetition rate with the robustness. Here we first demonstrate our laser, which is initiated by very strong pumping of 100 times the lasing threshold density, can surpass the photon lifetime limit that has restricted the pulse width to picoseconds for the past four decades and produce an unprecedented ultrashort pulse of 670 fs with a peak power of 7.5 W on autocorrelation measurement. The measured phenomena are reproduced effectively by our numerical calculation based on rate equations including the non-equilibrium intraband carrier distribution, which reveal that the pulse width is limited by the carrier-carrier scattering time, instead of the photon lifetime.

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confidence: 99%

Femtosecond pulse generation beyond photon lifetime limit in gain-switched semiconductor lasers

et al. 2018

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“…There are two general methods for making picosecond seed lasers. One was the Stimulated Brillouin Scattering (SBS) pulse compression technology [7][8][9][10][11][12] and the other one was the microchip laser technology [10,[13][14][15][16][17][18]. Microchip laser by the Diode Pumped Solid State (DPSS) laser was a relatively small resonator, which could be producing picosecond seed laser.…”

Section: Introductionmentioning

confidence: 99%

Development of Picosecond Laser for Dermatology Application: Its Changeable Pulse Width and Bundle Pulse Implementation

Yi¹

2020

Korean Association For Laser Dernatology And Trichology

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Jei-Pico laser, originally developed by Jeisys Medical in Korea, uses a new electro-optics technology beyond the existing SBS and Microchip laser. The characteristic feature of Jei-Pico is the variable pulse width from 180 ps to 2000 ps. Another function of Jei-Pico laser is that it's capable of 15 bundle pulses in one pumping cycle. Jei-Pico is capable of pulse combination that can change the pulse width of each of the 15 bundle pulses. The seed laser has been made with electro-optics technology that has a gain factor of ~9.0 × 10 9 through three optical amplifiers. The development of Jei-Pico is focused on Nd:YAG rod with 1064 and 532 nm. Maybe this technology can be applied to 532 nm as a pumping source to the Ti:Sapphire or alexandrite rod to produce the 700 nm~ wavelength. Jei-Pico has about 600 MW for 1064 nm and 220 MW for 532 nm.

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“…Providing its higher harmonics at 532 nm and 355 nm, diode-pumped Nd:YAG laser system has only a discrete single frequency as its primary fundamental laser line at 1064 nm. This dictates the utilization of optical parametric conversion methods in these systems for wavelength tunability, causing not only higher complexity and cost but also lower system reliability and efficiency [2][3][4]9]. Thus, today, the most common alternative approach is the vibronic solid-state laser materials with pulse generation and wavelength tunability capabilities by directly diode laser pumping.…”

Section: Introductionmentioning

confidence: 99%

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

Parali

Sheng

Minassian³

et al. 2018

Optics Communications

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We report the first experimental demonstration of a wavelength tunable passively Q-switched red-diode-end pumped Alexandrite laser using a semiconductor saturable absorber mirror (SESAM). We present the results of the study of passive SESAM Q-switching and wavelength-tuning in continuous diode-pumped Alexandrite lasers in both linear cavity and X-cavity configurations. In the linear cavity configuration, pulsed operation up to 27 kHz repetition rate in fundamental TEM00 mode was achieved and maximum average power was 41 mW. The shortest pulse generated was 550 ns (FWHM) and the Q-switched wavelength tuning band spanned was between 740 nm and 755 nm. In the X-cavity configuration, a higher average power up to 73 mW, and obtained with higher pulse energy 6.5 J at 11.2 kHz repetition rate, in fundamental TEM00 mode with excellent spatial quality M2 < 1.1. The Q-switched wavelength tuning band spanned was between 775 nm and 781 nm

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Investigation of a versatile pulsed laser source based on a diode seed and ultra-high gain bounce geometry amplifiers

Cited by 8 publications

References 23 publications

Femtosecond pulse generation beyond photon lifetime limit in gain-switched semiconductor lasers

Femtosecond pulse generation beyond photon lifetime limit in gain-switched semiconductor lasers

Development of Picosecond Laser for Dermatology Application: Its Changeable Pulse Width and Bundle Pulse Implementation

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

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