Investigation of a fitting phase-shift method for stress analysis using infrared photoelasticity

Ding, Qi; Wang, Miaojing; Xing, Huadan; He, Quanyan; Ma, Lulu; Qiu, Wei

doi:10.1016/j.optlaseng.2021.106787

Cited by 10 publications

(4 citation statements)

References 41 publications

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“…Residual stress is an important factor of optical components that has a significant impact on their usage 41 . As a non-destructive measurement method to detect the strain in the optical components, the optical strain measurement based on the photoelasticity has widely been applied in the industry of glass manufacturing and photovoltaic panel manufacturing 42 . Here, taking the advantages of our polarization-sensitive IR photodetectors with ultrahigh polarization sensitivity, we apply it into the optical strain measurement system to evaluate the strain in a polystyrene (PS) film.…”

Section: Resultsmentioning

confidence: 99%

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

et al. 2023

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Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 104), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.

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Section: Resultsmentioning

confidence: 99%

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

et al. 2023

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“…Residual stress is an important factor of optical components that has a signi cant impact on their usage 40 . As a non-destructive measurement method to detect the strain in the optical components, the optical strain measurement based on the photoelasticity has widely been applied in the industry of glass manufacturing and photovoltaic panel manufacturing 41 . Here, taking advantages of our polarization-sensitive IR photodetectors with ultrahigh polarization sensitivity, we apply it into the optical strain measurement system to evaluate the strain in a polystyrene (PS) lm.…”

Section: Application Demonstrations In Polarization Coded Communicati...mentioning

confidence: 99%

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

Dai

Wang

Qiang

et al. 2022

Preprint

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Filter-free miniaturized polarization-sensitive photodetectors based on anisotropic absorption in natural or artificial birefringent materials have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity, which is a key parameter based on polarization ratio (PR) and responsivity, is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. To tackle these challenges, we implement experimentally a miniaturized detector based on one-dimensional (1D) tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient and combining the finite-size effect of perfect plasmonic absorber. Our devices work at room-temperature with a zero-bias responsivity of 410 V/W and an infinite polarization ratio (PR=∞). A peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature, is observed in the long-wave infrared region (λ = 8.0 µm). The proposed device can simultaneously achieve full linear polarimetry detection of the power intensity, polarization angle, and linear polarization degree, with its simple geometrical configuration. To demonstrate its potentials in practical applications, we apply our polarization-sensitive photodetector to polarization-coded communication and optical strain measurement. Our work offers a feasible solution to develop miniaturized room-temperature photodetectors with ultrahigh polarization sensitivity at the long-wave infrared. The approach proposed here can be easily extended to other frequencies by simply adjusting the resonance wavelength of the plasmonic metamaterials.

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“…Various techniques, such as shadow moiré interferometry, Twyman-Green interferometry, X-ray radiography, scanning acoustic microscopy, and scanning electron microscopy, are employed for stress and curvature measurements in packaged chips [1][2][3][4][5]. While these methods can detect surface features and warpage deformation of the silicon wafer inside the packaged chips, only X-ray Diffraction (XRD) mapping allows for non-destructive, in situ, and quantitative measurements [6].…”

Section: Introductionmentioning

confidence: 99%

Metrology of Warpage in Silicon Wafers Using X-ray Diffraction Mapping

Gorji

2024

Preprint

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X-ray Diffraction (XRD) mapping is a non-destructive metrology technique that enables the reconstruction of warpage induced on a Silicon wafer through thermo-mechanical stress. Here, we mapped the wafer's warpage using a methodology based on a series of line scans in the x and y directions and at different 90-degree rotations of the same sample. These line scans collect rocking curves from the wafer's surface, recording the diffraction angle (ω) deviated from the Bragg angle due to surface misorientation. The surface warpage reflects in XRD measurements by inducing a difference between the measured diffraction angle and the reference Bragg angle (ω − ω0) and rocking curve broadening (FWHM). By collecting and integrating the rocking curves (RCs) and FWHM broadening from the whole surface and multiple rotations of the wafer, we could generate 3D maps of the surface function f(x) and the angular misorientation (warpage). The warpage exhibits a convex shape, aligning with optical profilometry measurements reported in the literature. The lab-based XRDI has the potential to be developed to map the wafer's warpage in a shorter time and in situ, as can be perfectly performed in Synchrotron radiation source.

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Investigation of a fitting phase-shift method for stress analysis using infrared photoelasticity

Cited by 10 publications

References 41 publications

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

Metrology of Warpage in Silicon Wafers Using X-ray Diffraction Mapping

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