Investigation of a buried double p-n junction structure implemented in CMOS technology for wavelength-sensitive detection

Lu, Guo‐Neng; Chouikha, Mohamed Ben; Sedjil, Mohamed; Alquié, G.

doi:10.1080/002072197135382

Cited by 11 publications

(15 citation statements)

References 5 publications

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“…Blue is absorbed near the surface and red at the depth. Consequently, the current collected at a specific output depends on the radiation frequency and, thus, a natural spectral selectivity appears [1][2] (see Fig. 1).…”

Section: Principle Of Operationmentioning

confidence: 98%

“…S Ј denotes the diffusion quantum efficiency of the region of interest, which is a function of geometrical parameters (X 1P , W 1 , and so on), the surface recombination velocity S r1 , the radiation wavelength, the doping profile, and so forth [1,2]. Hence, the resulting photocurrent flowing through each junction can be expressed as the sum of two diffusion currents and a drift current, such as:…”

Section: Bdj Under Illuminationmentioning

confidence: 99%

“…Holes and electrons are rapidly separated and flow in opposite directions due the high internal electrical-field. Both types of carriers contribute to the drift current (I dr1 and I dr2 , respectively, for J 1 and J 2 ), which can be described, under steady-state assumption, by the following equation [1,2]:…”

Section: Bdj Under Illuminationmentioning

confidence: 99%

“…To determine the expressions for these diffusion currents, the equation for the excess minority carriers must be solved by imposing appropriate boundary conditions [1][2][3][4]. Finally, the following general expression is obtained:…”

Section: Bdj Under Illuminationmentioning

confidence: 99%

“…Due to the increasing interest in CMOS integrated microsystems, a new kind of photodetector on silicon for visible light has been developed [1,2].…”

Section: Introductionmentioning

confidence: 99%

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Modelling of the CMOS buried double-junction photodetector

Hanna¹,

Alquié²,

Vasilescu³

2005

Microw. Opt. Technol. Lett.

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fixed as ⌬t ϭ 0.5⌬z/c. Then the 2 nd -order Liao's T2 ABC is applied in the lower boundary where the material is air and the 2 nd -order Liao's T3 ABC is applied in the upper boundary where the material is glass, with a refractive index of 1.5.The stability criterion for the hybrid algorithm is given by Eq. (7), but Liao's ABC requires ⌬t ϭ 0.5⌬z/c. In general, if we assume ⌬x ϭ ⌬y, then we can obtain the following stability criterion for using Liao's ABC: ⌬x ϭ ⌬y Ն ⌬z ͱ6 Ϸ 1.283⌬z.This is generally satisfied since, in the x and y directions, a lower sampling rate is usually used to take the advantage of the PSTD algorithm.Because we use Fourier PSTD with a uniform grid in the x and y directions, the hybrid algorithm in this paper requires that the material contrast in the x and y directions is not too large. Otherwise, the severe Gibbs phenomenon will contaminate the simulation results. In our numerical experiments, we found that when skin depth of the absorbing layer is very small, in which the case Gibbs phenomenon is sure to appear, there are fairly large differences in the field values obtained via the hybrid method and those obtained via FDTD with smaller grid size (see Fig. 7). Here we propose several possible remedies for high-contrast materials and good conductors, if they are included in the computation domain: (i) If the object geometry is rectangular on the mask surface, we can use the mapped PSTD along the x and y directions to help reduce the magnitude of the Gibbs phenomenon in the mapped space [12,14]; (ii) if the object geometry is not rectangular but can be handled with multidomain PSTD, we suggest using multidomain PSTD in the x and y directions; (iii) use regular Fourier PSTD for the x and y directions and then apply a low-pass filter to the final steady-state results contaminated by the Gibbs phenomenon. This may help restore the global exponential convergence property of the PSTD algorithm. We expect to see more progress in these areas in the near future. CONCLUSIONIn this paper, we have applied a hybrid PSTD-FDTD algorithm for electrically large thin-plate problems. We adopted FDTD along the vertical direction of the thin plate and PSTD along the horizontal directions. This arrangement can combine the advantages of both the FDTD and PSTD algorithms. As an example application, we studied the near-field scattering of a photo mask, and the hybrid algorithm was shown to offer large savings in memory usage and computation time, as compared with the FDTD method.

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Section: Principle Of Operationmentioning

confidence: 98%

Section: Bdj Under Illuminationmentioning

confidence: 99%

Section: Bdj Under Illuminationmentioning

confidence: 99%

Section: Bdj Under Illuminationmentioning

confidence: 99%

“…Due to the increasing interest in CMOS integrated microsystems, a new kind of photodetector on silicon for visible light has been developed [1,2].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Modelling of the CMOS buried double-junction photodetector

Hanna¹,

Alquié²,

Vasilescu³

2005

Microw. Opt. Technol. Lett.

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A colorimetric method with the use of BDJ detector for seawater pH measurement

Sedjil

Michard

et al. 1998

Analytica Chimica Acta

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A dual-wavelength method using the BDJ detector and its application to iron concentration measurement

Lu¹

1999

Meas. Sci. Technol.

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A new and uncomplicated method for absorption detection is presented that requires no optical instrument such as a spectrophotometer or colorimeter. It makes use of a two-wavelength light source and a BDJ (buried double p-n junction) detector operating as wavelength-sensitive device. The intensity-insensitive photocurrent ratio rdual=I2/I1 is used as the detector response and is related to the absorbing species. A reference curve rdual(C) obtained by calibration serves to determine concentrations of the component. It has been theoretically shown and experimentally verified that the curve rdual(C) becomes linear at low concentrations. Through an investigation in the case of iron concentration measurements, the suggested method has proved to be sensitive and reliable. Keywords: BDJ detector, dual-wavelength method, absorption detection, concentration measurements

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Investigation of a buried double p-n junction structure implemented in CMOS technology for wavelength-sensitive detection

Cited by 11 publications

References 5 publications

Modelling of the CMOS buried double-junction photodetector

Modelling of the CMOS buried double-junction photodetector

A colorimetric method with the use of BDJ detector for seawater pH measurement

A dual-wavelength method using the BDJ detector and its application to iron concentration measurement

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