INVESTIGATION COMPARISON ON THE GATE SPEED OF THREE-LEVEL AND TWO-LEVEL QUANTUM NOT GATES WITH ASYMMETRIC POTENTIAL OF rf-SQUID

Abstract

We investigate the relation between the speed of quantum NOT gate and the asymmetry or detuning of the potential in system of the interaction of a two-level rf-SQUID qubit with a classical microwave pulse. The rf-SQUID is characterized by an asymmetric double well potential that gives rise to diagonal matrix elements. Then in resonance, we compare the gate speeds for three-level and two-level quantum NOT gates. We show that in general, a three-level gate is much faster than the conventional two-level gate.

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