Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

Reuter, R.; Agethen, M.; Auer, U.; Waasen, S. van; Peters, D.; Brockerhoff, W.; Tegude, F.‐J.

doi:10.1109/22.588612

Cited by 55 publications

(20 citation statements)

References 27 publications

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“…The inductive behavior under impact ionization in both InAschannel and InGaAs-channel HEMT's has been previously reported [20]. In more recent work on InGaAs channel devices, the inductive behavior was modeled by adding an active circuit in order to examine the effect of impact ionization on both the rf and noise performance [21]. In order to examine the intrinsic device characteristics, the bonding pad capacitance of the gate was removed from the equivalent circuit.…”

Section: Microwave Characterizationmentioning

confidence: 99%

AlSb/InAs HEMT's for low-voltage, high-speed applications

Boos

Kruppa

Bennett

et al. 1998

IEEE Trans. Electron Devices

127

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The design, fabrication, and characterization of 0.1 m AlSb/InAs HEMT's are reported. These devices have an In 0:4 Al 0:6 As/AlSb composite barrier above the InAs channel and a p + + + GaSb layer within the AlSb buffer layer. The HEMT's exhibit a transconductance of 600 mS/mm and an f f f T T T of 120 GHz at V V V DS DS DS = 0:6 V. An intrinsic f f f T T T of 160 GHz is obtained after the gate bonding pad capacitance is removed from an equivalent circuit. The present HEMT's have a noise figure of 1 dB with 14 dB associated gain at 4 GHz and V V V DS DS DS = 0:4 V. Noise equivalent circuit simulation indicates that this noise figure is primarily limited by gate leakage current and that a noise figure of 0.3 dB at 4 GHz is achievable with expected technological improvements. HEMT's with a 0.5 m gate length on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic fT Lg fT Lg fT Lg product of 50 GHz-m.Index Terms-InAs, MODFET's, quantum wells, semiconductor device fabrication, semiconductor device noise. There he worked on a wide range of projects dealing with electronic materials modification and device fabrication and testing. In particular, he pioneered the use of ion implantation for III-V microwave device development. In 1981, he was made head of the Ion Implantation and Devices Section and in 1992, he became head of the High Frequency Devices and Materials Section. His research efforts have included MeV implantation for novel analog microwave devices, III-V MBE for microwave and millimeter-wave devices, quantum transport for electronic functions, wide band-gap materials and devices for high-temperature and high-power microwave devices, III-V MBE material for optical correlators, and a variety of related topics. He has co-authored more than 85 papers and holds eight patents. He has been extensively involved in the Navy's contractual efforts for electronic device research. Dr. Dietrich represented the Navy as a member of the tri-service team that supported DARPA in both the MIMIC and MAFET programs.

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Section: Microwave Characterizationmentioning

confidence: 99%

AlSb/InAs HEMT's for low-voltage, high-speed applications

Boos

Kruppa

Bennett

et al. 1998

IEEE Trans. Electron Devices

127

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“…The gradual increase in f T with the InAs inset thickness in the channel was further studied by extracting small-signal equivalent circuit model ( Fig. 5, [14], [15]) for each case, as presented in Table II. The extraction reveals that the f T improvement with thicker InAs inset is mainly attributed to an improved intrinsic small-signal transconductance g m .…”

Section: (C)mentioning

confidence: 99%

“…5. Intrinsic small-signal equivalent circuit model [14] it including the model extension (boxed in blue) is used to capture the inductive behavior in S 22 in the presence of impact ionization and quantify impact ionization [15]. Extrinsic elements not shown.…”

Section: (C)mentioning

confidence: 99%

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Ruiz

Saranovac

Han

et al. 2019

IEEE Trans. Electron Devices

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GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence of the InAs inset design details on transistor performance has not been parametrized in the literature. We present a systematic study of the effects of the InAs channel inset thickness on transistor characteristics and cutoff frequencies versus temperature, and on the noise performance at 300 K. The epitaxial layer structures considered here incorporate 2 to 5-nm InAs insets in a fixed total composite channel thickness. All layers exhibit excellent electron mobilities (from 40 200 to 54 800 cm 2 /Vs at 77 K). Thicker InAs insets improve both the current gain cutoff frequency (f T) and the maximum oscillation frequency (f MAX). However, they also result in higher gate leakage currents and increased channel impact ionization. 50-nm gate length pHEMTs with a 5-nm InAs inset feature the highest simultaneous f T /f MAX ≥ 390/675 (455/800) GHz at 300 (15) K for a low-noise bias but exhibit the poorest minimum noise figure NF MIN. Whereas higher f T (and/or f MAX) values have traditionally been associated with improved noise performances, this is no longer the case.

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“…al. [3,4], on the other hand, represented the impact ionization effect by introducing a impact ionization current source in a R-C combination. The current source is shorted by the parallel capacitor at high frequencies, whereas, the resistance in series with the combination provides a current path at dc.…”

Section: Introductionmentioning

confidence: 99%

“…a1. [3,4] have investigated quite extensively the effect of impact ionization on InP based HEMTs. The presence of impact ionization is evident from an inductive shift in S22 at low frequencies.…”

Section: Introductionmentioning

confidence: 99%

Impact ionization in InP-based HEMTs

Webster

Anwar²,

Wu³

1997

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97

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A physical model of impact ionization in InP HEMTs is developed and incorporated in a.n equivalent circuit model for comparison with experiment a1 observations showing excellent agreement. Impact ionization is modeled by a voltage dependent current source in an RC network at the drain end. The RC branch behaves like a low pass filter that imparts a frequency dependence to the impact ionization current source and enables one to model the inductive nature of S22 at low frequencies. Theoretical calculations show a compression of transconduct ance due to impact ionization with increasing gate bias that is supported by experimental data. Finally, an experimental method is suggested to extract impact ionization induced transconductance using YZl.

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Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

Cited by 55 publications

References 27 publications

AlSb/InAs HEMT's for low-voltage, high-speed applications

AlSb/InAs HEMT's for low-voltage, high-speed applications

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Impact ionization in InP-based HEMTs

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