Investigation and Mitigation of Shunts for Higher Efficiency Epitaxial GaSb/GaSb and GaSb/GaAs Solar Cells

GaSb grown on GaAs through interfacial misfit (IMF) arrays grown via molecular beam epitaxy has been heavily studied; there is limited research, however, on IMF growth through metal-organic vapor phase epitaxy. To demonstrate viability for integration in a multijunction solar cell for terrestrial use, it is imperative to demonstrate high quality GaSb grown on GaAs through metal-organic vapor phase epitaxy. The preferred gallium precursors for n-type and p-type GaSb for longest minority carrier diffusion length were determined to be trimethylgallium and triethylgallium, respectively. A heteroepitaxial GaSb-on-GaAs device attained an open-circuit voltage of 190 mV and an efficiency of 2.2%. Extracted threading dislocation density from the minority carrier lifetime for the heteroepitaxial GaSb-on-GaAs device was determined to be 7.5×106cm−2. In a modeled multijunction solar cell, this device attributes to an overall efficiency of 33.1% under AM1.5g illumination.

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Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cells

Kessler-Lewis

Polly

Nelson

et al. 2023

Journal of Applied Physics

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Investigation and Mitigation of Shunts for Higher Efficiency Epitaxial GaSb/GaSb and GaSb/GaAs Solar Cells

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Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cells

Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cells

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