Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system: the effect of processing parameters

Mao, Ming; Bogaerts, Annemie

doi:10.1088/0022-3727/43/31/315203

Cited by 22 publications

(13 citation statements)

References 48 publications

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“…Indeed, it was observed in the calculation results that NH 3 decomposes easily to produce atomic H, especially at low hydrocarbon gas fraction. In general, our model predicts that a lower fraction of hydrocarbon gases (CH 4 or C 2 H 2 , i.e., below 20%) and hence a higher fraction of etchant gases (H 2 or NH 3 ) in the gas mixture result in more "clean" conditions for controlled CNT growth, due to the dominant role of atomic H [85], which is in agreement with literature observations (e.g., [76,83,[87][88][89][90]). …”

Section: (B) Cnts and Related Structuressupporting

confidence: 91%

“…Several modeling efforts have been presented in literature to describe the plasma chemistry in various types of plasma reactors used for carbon nanostructure growth, including dc plasmas [73][74][75][76], capacitively coupled rf plasmas [77,78], and inductively coupled plasmas (ICPs) [79][80][81][82][83][84][85]. These are either 0D chemical-kinetics models [79][80][81][82], 1D [73][74][75][76][77][78] or 2D [83][84][85] fluid approaches.…”

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

“…These are either 0D chemical-kinetics models [79][80][81][82], 1D [73][74][75][76][77][78] or 2D [83][84][85] fluid approaches. The gas mixtures considered in these models are the typical gases used for the growth of CNTs (and other carbon nanostructures), and consist of either CH 4 or C 2 H 2 as hydrocarbon growth precursors, mixed with H 2 or NH 3 as etchant gases, sometimes diluted with Ar.…”

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

“…In a subsequent paper [85] a numerical parameter study was carried out with this model, varying the gas ratios, gas pressure, coil power, bias power and substrate temperature. Figure 3 illustrates the calculated conversion of the feedstock gases in each of the gas mixtures investigated, as a function of the hydrocarbon gas fraction (CH 4 or C 2 H 2 ).…”

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

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Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials

Bogaerts¹,

Eckert²,

Mao³

et al. 2011

J. Phys. D: Appl. Phys.

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In this review paper, an overview is given of different modeling efforts for plasmas used for the formation and growth of nanostructured materials. This includes both the plasma chemistry, providing information on the precursors for nanostructure formation, as well as the growth processes itself. We limit ourselves to carbon (and silicon) nanostructures. Examples of the plasma modeling comprise nanoparticle formation in silane and hydrocarbon plasmas, as well as the plasma chemistry giving rise to carbon nanostructure formation, such as (ultra)nanocrystalline diamond ((U)NCD) and carbon nanotubes (CNTs). The second part of the paper deals with the simulation of the (plasma-based) growth mechanisms of the same carbon nanostructures, i.e., (U)NCD and CNTs, both by mechanistic modeling and detailed atomistic simulations. IntroductionLow temperature plasmas are playing an increasingly important role for the formation and growth of nanostructures and nanostructured materials (e.g., [1][2][3][4][5][6][7]). To improve the performance of these plasma growth processes, a good insight is desired in the plasma and in the interaction with the growing nanostructures. This insight can be obtained by experimental research, but the latter is not always straightforward, in view of the small dimensions of the nanomaterials and the possible disturbance of the plasma characteristics, e.g., when introducing a probe. Therefore, computer simulations can be very useful to assist in the experimental developments.In the present paper, we will give an overview of different modeling efforts that have been presented in the literature for plasmas used for nanostructure formation. This includes two different aspects. First, a thorough understanding of the plasma behavior is needed. This comprises background gas flow and heating (i.e., fluid dynamics), gas breakdown, transport and heating of the electrons and the so-called heavy particles, as well as the plasma chemistry, i.e., creation and destruction of the various plasma species by chemical reactions. Modeling of the plasma chemistry can give indications on which species are important precursors for the growth of nanostructured materials and how the plasma operating conditions can be tuned to optimize the growth process. Therefore, in this paper we will mainly focus on the plasma chemistry modeling. Several plasma modeling approaches exist in literature, such as analytical models, zero-dimensional (0D) chemical kinetics simulations, fluid models (describing the chemical kinetics as well as fluid dynamics), solving the Boltzmann transport equation, Monte Carlo (MC) and particle-in-cell (PIC)-MC simulations, as well as hybrid methods, combining the above (e.g., MC + fluid) models. For describing the plasma chemistry, the 0D chemical kinetics approach is often applied, as it can take into account a large number of different species and reactions without too much computational effort. However, it assumes a spatially uniform plasma composition and does not consider transport of the plasm...

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Section: (B) Cnts and Related Structuressupporting

confidence: 91%

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

See 2 more Smart Citations

Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials

Bogaerts¹,

Eckert²,

Mao³

et al. 2011

J. Phys. D: Appl. Phys.

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“…In reality, the C 2 H 2 /NH 3 plasma mixture contains a large number of species [15,16] (ions and neutrals). In reality, the C 2 H 2 /NH 3 plasma mixture contains a large number of species [15,16] (ions and neutrals).…”

Section: Modelmentioning

confidence: 99%

Modelling the effects of nitrogen doping on the carbon nanofiber growth via catalytic plasma‐enhanced chemical vapour deposition process

Gupta

Sharma

2018

Contributions to Plasma Physics

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An analytical model is developed to describe the effects of nitrogen doping on the growth of the carbon nanofibers (CNFs) and to elucidate the growth mechanism of nitrogen‐contained carbon nanofibers (N‐CNFs) on the catalyst substrate surface through the plasma‐enhanced chemical vapour deposition (PECVD) process. The analytical model accounts for the charging of CNFs, kinetics of all plasma species (electrons, ions, and neutrals) in the reactive plasma, generation of carbon species on the catalyst nanoparticle surface due to dissociation of hydrocarbons, CNF growth due to diffusion and precipitation of carbon species, and various other processes. First‐order differential equations have been solved for glow discharge plasma parameters for undoped CNFs (CNF growth in C2H2/H2 plasma) and nitrogen‐doped CNFs (N‐CNF growth in C2H2/NH3 plasma). Our investigation found that nitrogen‐doped CNFs exhibit lower tip diameters and smaller heights compared to the undoped CNFs. In addition, we have estimated that nitrogen‐doped CNFs have more enhanced field emission characteristics than the undoped CNFs. Moreover, we have also observed that N‐CNFs' growth rate increases and tip diameter decreases as the C2H2/NH3 gas ratio decreases. The theoretical results of the present investigation are consistent with the existing experimental observations.

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Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

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Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

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Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma-enhanced CVD system: the effect of processing parameters

Cited by 22 publications

References 48 publications

Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials

Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials

Modelling the effects of nitrogen doping on the carbon nanofiber growth via catalytic plasma‐enhanced chemical vapour deposition process

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

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