Investigating the neutronic, thermal-hydraulic, and solid mechanics analysis for AP-1000 nuclear reactor

Mohsen, Mohamed Y.M.; Hassan, Mohamed Saffaa; Aziz, Moustafa; Abdel‐Rahman, Mohamed A.E.

doi:10.1080/15567036.2021.1912215

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…The flux and spectrum of fast neutrons vary with temperature, latitude, and longitude. To observe the event rate, experiments were conducted at the maximum flux of 5 × 10 13 /cm 2 ·s at the AP-1000 reactor neutron irradiation facility in the United States [ 14 ]. The number of silicon atoms per unit volume was 5 × 10 22 /cm 3 , and the cross-section of a neutron at 1 MeV was 2 barns (2 × 10 −24 cm 2 ).…”

Section: Introductionmentioning

confidence: 99%

Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

Bang

Lee

et al. 2023

Micromachines

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We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions and fin structures are considered as variables to estimate the worst-case scenario for displacement defects. The rectangular defect clusters capture more widely distributed charges at the fin top, reducing the on- and off-current. The read static noise margin (RSNM) is the most degraded in the pull-down transistor during the read operation. The increased fin width decreases the RSNM due to the gate field. The current per cross-sectional area increases when the fin height decreases, but the energy barrier lowering by the gate field is similar. Therefore, the reduced fin width and increased fin height structure suit the 10 nm node FinFET 6T SRAMs with high radiation hardness.

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Section: Introductionmentioning

confidence: 99%