Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

Garland, Ben M.; Davis, Benjamin E.; Strandwitz, Nicholas C.

doi:10.1016/j.solmat.2023.112537

Cited by 2 publications

(3 citation statements)

References 67 publications

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“…More precisely, the ideality factor is mainly correlated with the quality of the interfacial layer, which degrades after relatively long times (from 3 min) [32]. On the other hand, Rs and j b are influenced by the mobility of charges across the junction as well as the transport mechanism [33]. These factors are enhanced by the amount of AgNP incorporated into the Ag/SiNW junction.…”

Section: Resultsmentioning

confidence: 99%

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Hemdani,

Rahmani

2024

Phys. Scr.

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In this paper, we studied the effect of the passivation of silicon nanowires (SiNWs) by silver nanoparticles (AgNPs) on the efficiency of Ag/SiNWs/Si Schottky diodes. SiNWs are obtained by one-step Ag-assisted chemical etching method. AgNPs were deposited on SiNWs using an electroless dipping method. Schottky junction devices have been successfully made using silicon nanowires coated with silver nanoparticles. The current–voltage (I-V) characteristics of Ag/AgNPs-SiNWs Schottky diode have been investigated by varying the immersion time in silver nitrate solution from 1 to 5 min. The I-V characteristics presented in logarithmic scale confirmed the domination of SCLC conduction mechanism at high voltage. The ideality factor (n), height of potential barrier (φb) and series resistance (Rs) of diodes are calculated by adopting the Cheung method. Compared to the Ag/SiNWs Schottky junction, the diode that presents AgNPs at the interface shows a significant improvement in electrical parameters. The potential barrier reaches 1.09 eV and the ideality factor is reduced to 2.64 with the presence of AgNPs for an immersion time of 1 min. Norde’s equation has also been used to calculate the series resistance and the potential barrier. The results obtained by Norde method are slightly shifted compared to those found by Cheung functions while the findings concerning the optimization of the immersion time are practically the same.

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Section: Resultsmentioning

confidence: 99%

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Hemdani,

Rahmani

2024

Phys. Scr.

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“…For example, Φ B minimization is needed for ohmic contacts. Decreasing Φ B is a key factor in reducing parasitic resistance at transistor source/drain contacts, which is of importance for continued scaling down of device dimensions. − The formation of a Schottky barrier at electrical contact interfaces also impedes charge carrier collection in certain photovoltaic architectures. , In other cases, maximization of Φ B is desirable. In Schottky barrier solar cells, a large Φ B is necessary to separate photogenerated electron–hole pairs and prevent recombination. , Power rectifiers utilize a large Φ B to achieve a high turn-on voltage and reduce leakage current in the “off” state .…”

Section: Introductionmentioning

confidence: 99%

“… 1 − 3 The formation of a Schottky barrier at electrical contact interfaces also impedes charge carrier collection in certain photovoltaic architectures. 4 , 5 In other cases, maximization of Φ B is desirable. In Schottky barrier solar cells, a large Φ B is necessary to separate photogenerated electron–hole pairs and prevent recombination.…”

Section: Introductionmentioning

confidence: 99%

Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition

Davis,

Strandwitz

2024

ACS Appl. Electron. Mater.

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The effects of different high-κ tunnel oxides on the metal−insulator−semiconductor Schottky barrier height (Φ B ) were systematically investigated. While these high-κ interlayers have been previously observed to affect Φ B , there has never been a clear consensus as to why this Φ B modulation occurs. Changes in Φ B were measured when adding 0.5 nm of seven different high-κ oxides to n-Si/Ni contacts with a thin native silicon oxide also present. Depending on the high-κ oxide composition and Φ B measurement technique, increases in Φ B up to 0.4 eV and decreases up to 0.2 eV with a high-κ introduction were measured. The results were compared to several different hypotheses regarding the effects of tunnel oxides on Φ B . The experimental data correlated most closely with the model of a dipole formed at the SiO x /high-κ interface due to the difference in the oxygen areal density between the two oxides. Knowledge of this relationship will aid in the design of Schottky and ohmic contacts by providing criteria to predict the effects of different oxide stacks on Φ B .

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Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

Cited by 2 publications

References 67 publications

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition

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