Investigating the complex mechanism of B migration in a magnetic-tunnel-junction trilayer structure—a combined study using XPS and TOF-SIMS

Ying, Ji-Feng; Ji, Rong; Lim, Sze Ter; Tran, Michaël; Wang, Chen Chen; Ernult, F.

doi:10.1088/0022-3727/49/6/065004

J. Phys. D: Appl. Phys.

2015

DOI: 10.1088/0022-3727/49/6/065004

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Investigating the complex mechanism of B migration in a magnetic-tunnel-junction trilayer structure—a combined study using XPS and TOF-SIMS

Ji-Feng Ying¹,

Rong Ji²,

Sze Ter Lim³

et al.

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2023

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Cited by 2 publications

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“…In most of the MRAM research, the spin-torque structure consists of two CoFeB layers separated by a very thin MgO insulator layer [1]. Upon annealing, one important issue is that B diffuses to the insulating layer and causes a magnetic dead layer, which degrades the performance of MRAM [2][3][4]. Thus, to avoid this issue, an additional capping layer, such as Ta or Zr acted as B absorber can be put next to the CoFeB layers.…”

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confidence: 99%

Boron transport enhancement with different capping layers by specific annealing temperatures studied by X-ray and polarized neutron reflectometry

Cheng,

Liao,

Anbalagan

et al. 2023

Acta Cryst Sect A

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mentioning

confidence: 99%

Boron transport enhancement with different capping layers by specific annealing temperatures studied by X-ray and polarized neutron reflectometry

Cheng,

Liao,

Anbalagan

et al. 2023

Acta Cryst Sect A

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Enhancement of skyrmion density via interface engineering

et al. 2023

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Magnetic skyrmions are promising candidates for computing and memory applications. The static and dynamic behaviors of skyrmions are tunable by altering the interfacial magnetic properties. These interfacial magnetic properties are alterable by modifying the interface structure of thin films. However, the relationship between the structural properties of the interface and the skyrmions properties is not straightforward, and a comprehensive insight is required to facilitate better controllability of the skyrmions’ behaviors. Here, we comprehensively understand the relationship between atomic displacements at the interface and skyrmions’ static behavior. In this study, we used ion irradiation to achieve inter-atomic displacements. We observed that the inter-atomic displacements could tailor the physical properties of skyrmions. We noticed a peculiar increase in the magnetization, Dzyaloshinskii–Moriya interaction, and exchange stiffness. The modifications in magnetic properties reduced the domain wall energy, which enhanced the skyrmion density (by six-folds) and reduced the average skyrmion diameter (by 50%). Furthermore, we compared the observed results of ion irradiation with those from the annealing process (a well-studied method for modifying magnetic properties) to better understand the effect of atomic displacements. Our study provides a route to achieve a highly-dense skyrmion state, and it can be explored further to suppress the skyrmion Hall effect for skyrmion-based applications.

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Investigating the complex mechanism of B migration in a magnetic-tunnel-junction trilayer structure—a combined study using XPS and TOF-SIMS

Cited by 2 publications

References 9 publications

Boron transport enhancement with different capping layers by specific annealing temperatures studied by X-ray and polarized neutron reflectometry

Boron transport enhancement with different capping layers by specific annealing temperatures studied by X-ray and polarized neutron reflectometry

Enhancement of skyrmion density via interface engineering

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