Investigating Stable Low-Energy Gallium Oxide (Ga2O3) Polytypes: Insights into Electronic and Optical Properties from First Principles
Arthi Devamanoharan,
Vishnukanthan Venkatachalapathy,
Vasu Veerapandy
et al.
Abstract:This study provides a comprehensive analysis of the electronic and optical properties of low-energy gallium oxide (Ga 2 O 3 ) polytypes not considered earlier. Among these polytypes, the monoclinic structure (β-Ga 2 O 3 ) holds significant relevance for both research and practical applications due to its superior stability under typical conditions. The primary aim of this research is to identify new and stable Ga 2 O 3 polytypes that may exist under zerotemperature and zero-pressure conditions. To achieve this… Show more
“…The volume data was fitted with a third-order Birch–Murnaghan equation of state: 31–33 where V 0 is the volume at zero pressure, B 0 is the bulk modulus at ambient pressure, and is a parameter for the pressure derivative. The fitting of the Birch–Murnaghan equation indicated that the isothermal bulk modulus B 0 for the Ga 2 O 3 NCs was estimated as 137.34 GPa, much higher than that (85.9 GPa) of the bulk counterpart 34 (Fig. S9†).…”
Pressure-induced blue emission enhancement and robust pressure resistance are achieved in the fourth-generation ultrawide-bandgap semiconductor Ga2O3 nanocrystals.
“…The volume data was fitted with a third-order Birch–Murnaghan equation of state: 31–33 where V 0 is the volume at zero pressure, B 0 is the bulk modulus at ambient pressure, and is a parameter for the pressure derivative. The fitting of the Birch–Murnaghan equation indicated that the isothermal bulk modulus B 0 for the Ga 2 O 3 NCs was estimated as 137.34 GPa, much higher than that (85.9 GPa) of the bulk counterpart 34 (Fig. S9†).…”
Pressure-induced blue emission enhancement and robust pressure resistance are achieved in the fourth-generation ultrawide-bandgap semiconductor Ga2O3 nanocrystals.
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