2016
DOI: 10.1021/acs.jpcc.5b10415
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Investigating Sequential Vapor Infiltration Synthesis on Block-Copolymer-Templated Titania Nanoarrays

Abstract: Sequential vapor infiltration synthesis (SVIS) within block-copolymer templates has emerged as an attractive means for the controlled formation of metal oxide nanoarrays on arbitrary substrates. This approach takes advantage of the molecular-level controls that are inherent in the production of the template and the exposure tools that are available for the vapor-phase growth of materials. To take adequate advantage of these controls and their dependencies on any environmental factors, it is essential to unders… Show more

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Cited by 29 publications
(28 citation statements)
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“…Similar to atomic layer deposition (ALD), SIS involves the sequential exposure of a material to alternating vapors of a reactive organometallic precursor and a counter reactant 24,25 . While ALD is performed on a non-porous substrate to grow inorganic films 26 , SIS is performed on polymers, where the diffusion of reactants into the polymer can change its chemical and mechanical properties, increasing its tensile strength 27 , changing its permeability to certain molecules 28 , improving its conductivity 29 , or allowing it to maintain its structure during annealing [30][31][32][33] . ALD, and similar techniques like SIS, have been widely and safely used for decades, both in industry and academic research 34 .…”
mentioning
confidence: 99%
“…Similar to atomic layer deposition (ALD), SIS involves the sequential exposure of a material to alternating vapors of a reactive organometallic precursor and a counter reactant 24,25 . While ALD is performed on a non-porous substrate to grow inorganic films 26 , SIS is performed on polymers, where the diffusion of reactants into the polymer can change its chemical and mechanical properties, increasing its tensile strength 27 , changing its permeability to certain molecules 28 , improving its conductivity 29 , or allowing it to maintain its structure during annealing [30][31][32][33] . ALD, and similar techniques like SIS, have been widely and safely used for decades, both in industry and academic research 34 .…”
mentioning
confidence: 99%
“…These are by far the most commonly utilized techniques for the dimensional characterization of nanomaterials, requiring simple calibration of the magnification using calibration samples with features in the same dimensional range as the analyzed ones [ 57 ]. Electron microscopy has been widely reported for the morphological characterization of block copolymers nanopatterns or polymeric films treated with SIS of inorganic compounds [ 31 , 35 , 51 , 56 , 58 , 59 , 60 , 61 ]. Electron microscopy is often complemented by energy-dispersive X-ray (EDX) spectroscopy.…”
Section: Characterization Techniquesmentioning
confidence: 99%
“…We had earlier shown a high degree of control over the incorporation of the organometallic precursor by using atomic layer deposition, with the resulting oxide nanostructures enabling nanolithography down to sub-10 nm regime [35]. This was followed by several other investigations in literature focusing on vapor phase incorporation of metal-organic precursors within different block copolymer DOI: http://dx.doi.org/10.5772/intechopen.89064 domains using ALD processes [87][88][89][90][91]. It is important that the nanolithography process is optimized to not widen standard deviations between the features or across the wafer.…”
Section: Metal Nanopillars Arraysmentioning
confidence: 99%