2017
DOI: 10.1038/ncomms15033
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Inverting polar domains via electrical pulsing in metallic germanium telluride

Abstract: Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM … Show more

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Cited by 36 publications
(29 citation statements)
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“…Alternative approaches have also been applied to degenerately doped ferroelectrics. [43] IV. CONCLUSION In summary, we proposed a ferroelectric capacitor where the conventional metallic electrodes are replaced by noncentrosymmetric metallic electrodes.…”
Section: Resultsmentioning
confidence: 99%
“…Alternative approaches have also been applied to degenerately doped ferroelectrics. [43] IV. CONCLUSION In summary, we proposed a ferroelectric capacitor where the conventional metallic electrodes are replaced by noncentrosymmetric metallic electrodes.…”
Section: Resultsmentioning
confidence: 99%
“…In principle, itinerant electron screening in a (semi)metal might rule out the necessity of electrostatically driven domain formation due to the fundamental incompatibility of polarity and metallicity, but the existence of polar domains, formed by local bonding preferences, is still possible since this mechanism is insensitive to the presence of charge carriers 22 . Some progress has been made in, for example, the polar interlocked ferroelastic domains in polar metal Ca 3 Ru 2 O 7 25,26 and the structural defect-mediated polar domains in metallic GeTe 27 . In this context, exploring the domain structures in polar Weyl semimetal would be particularly important because the Weyl points and Fermi-arc connectivity can be manipulated via domain reorientation or locally modified order parameters at these DWs 2831 .…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, a possible explanation for the striking difference in domain mapping between crystal and film is that in local contact mode the surface excitation is different compared to domain mapping: in the first case, the cantilever is fixed in position; in the latter, it is sweeping the surface. It turns out that for "leaky" ferroelectrics, i.e., those with significant electric conductivity such as our slightly p-doped GeTe, heat and pulsed currents are essential ingredients in manipulating the FE domains [52]. Therefore, it is reasonable to assume that a DC voltage applied to the cantilever in local contact mode, combined with pulsed currents induced by AC voltage, are sufficient to reorient the surface-interface FE domain structure depicted in Figure 4f such that the hysteresis is consistent with data obtained from the crystal.…”
Section: Self-poling Of Gete Surface Versus Bulkmentioning
confidence: 99%