Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector

Xu, Kaimin; Xiao, Xiongbin; Zhou, Wenjia; Jiang, Xianyuan; Wei, Qi; Chen, Hao; Deng, Zhuo; Huang, Jian; Chen, Baile; Ning, Zhijun

doi:10.1021/acsami.0c01744

Cited by 64 publications

(60 citation statements)

References 34 publications

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“…biomedicine, photo-electrochemistry, photonics, sensors and thin-film-transistors. [37][38][39][40][41][42][43][44][45] The atomic layer deposition (ALD) technique is widely used, nowadays, to manufacture insulator-silicon junctions for many devices. ALD is particularly suitable for the LT and 3-D technologies, as the growth temperature of conformal ALD films is often clearly below 450 o C. After cleaning the Si surface (i.e.…”

Section: Introductionmentioning

confidence: 99%

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Rad

Lehtiö

Mack

et al. 2020

ACS Appl. Mater. Interfaces

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Low-temperature (LT) passivation methods (< 450 o C) for decreasing defect densities in the material combination of silica (SiOx) and silicon (Si) are relevant to develop a diverse technology (e.g. electronics, photonics, medicine), where defects of SiOx/Si cause losses and malfunctions. Many device structures contain the SiOx/Si interface(s), of which defect densities cannot be decreased by the traditional, beneficial high temperature treatment (> 700 o C). Therefore, the LT passivation of SiOx/Si has been, since long, a research topic to improve applications performance. Here, we demonstrate that a LT (< 450 o C) ultrahigh-vacuum (UHV) treatment is a potential method that can be combined with current state-of-theart processes in a scalable way, to decrease the defect densities at the SiOx/Si interfaces. The studied LT-UHV approach includes a combination of wet chemistry followed by UHV-based heating and pre-oxidation of silicon surfaces. The controlled oxidation during the LT-UHV treatment is found to provide an until now not reported crystalline Si oxide phase. This crystalline SiOx phase can explain the observed decrease in the defect density by halve.Furthermore, the LT-UHV treatment can be applied in a complementary, post-treatment way to ready components to decrease electrical losses. The LT-UHV treatment has been found to decrease the detector leakage current by factor of two.

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Section: Introductionmentioning

confidence: 99%

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Rad

Lehtiö

Mack

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…[80][81][82][83][84] Since most of commercial ROICs are based on silicon, the integration of CQD based IR photodetectors with silicon can simplify the fabrication processes for IR FPAs detectors and reduce cost. [85][86][87][88] Integrating with LED for upconversion is another attractive application of CQD based IR photodetectors. Upconversion devices can convert the invisible IR into visible light without ROICs and have made significant progress in recent years.…”

Section: Scalable Device Structure Of Cqd Ir Photodetectorsmentioning

confidence: 99%

Section: Integrated With Siliconmentioning

confidence: 99%

“…reported an inverted PbS CQD/Si heterojunction photodiode ( Figure a). [ 88 ] Inverted structure with p‐type PbS CQD/n‐type Si heterojunction has better energy band alignment than n‐type PbS CQD/p‐type Si structure, hence the inverted photodiode showing broader detecting wavelength range, high response and ultra‐low working bias. It obtained a high normalized detectivity of 1.47 × 10 11 Jones at 1540 nm without reverse bias (Figure 12b), and the bandwidth of it reached 29.8 kHz.…”

Section: Scalable Device Structure Of Cqd Ir Photodetectorsmentioning

confidence: 99%

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Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Zhou

Ning

2020

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Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing, size‐tunable optoelectronic properties, and flexibility. Tremendous efforts including material engineering and device structure manipulation have been made to improve the performance of the photodetectors based on CQDs. In recent years, benefiting from the facial integration with materials such as 2D structure, perovskite and silicon, as well as device engineering, the performance of CQD IR photodetectors have been developing rapidly. On the other hand, to prompt the application of CQD IR photodetectors, scalable device structures that are compatible with commercial systems are developed. Herein, recent advances of CQD based IR photodetectors are summarized, especially material integration, device engineering, and scalable device structures.

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“…Figure 4f compares the ALD devices to prior PD literature at similar wavelengths. [6,7,[29][30][31][32][33][34] The ALD devices provide an improvement in EQE, dark current, speed (fall times), and stability compared to prior works.…”

Section: Introductionmentioning

confidence: 99%

Controlled Crystal Plane Orientations in the ZnO Transport Layer Enable High‐Responsivity, Low‐Dark‐Current Infrared Photodetectors

et al. 2022

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Colloidal quantum dots (CQD) have emerged as attractive materials for infrared (IR) photodetector (PD) applications because of their tunable bandgaps and facile processing. Presently, zinc oxide is the electron‐transport layer (ETL) of choice in CQD PDs; however, ZnO relies on continuous ultraviolet (UV) illumination to remove adsorbed oxygen and maintain high external quantum efficiency (EQE), speed, and photocurrent. Here, it is shown that ZnO is dominated by electropositive crystal planes which favor excessive oxygen adsorption, and that this leads to a high density of trap states, an undesired shift in band alignment, and consequent poor performance. Over prolonged operation without UV exposure, oxygen accumulates at the electropositive planes, trapping holes and degrading performance. This problem is addressed by developing an electroneutral plane composition at the ZnO surface, aided by atomic layer deposition (ALD) as the means of materials processing. It is found that ALD ZnO has 10× lower binding energy for oxygen than does conventionally deposited ZnO. IR CQD PDs made with this ETL do not require UV activation to maintain low dark current and high EQE.

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Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector

Cited by 64 publications

References 34 publications

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C

Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Controlled Crystal Plane Orientations in the ZnO Transport Layer Enable High‐Responsivity, Low‐Dark‐Current Infrared Photodetectors

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