Inversion-mode MOSFET's in polycrystalline Silicon thin films: Characterization and modeling

Feng, Qian; Kim, D.M.; Park, Hee Kyun; Sachitano, J.

doi:10.1109/t-ed.1987.23333

Cited by 20 publications

(2 citation statements)

References 14 publications

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“…28) We believed that the use of a design with channel length less than 2 µm can suppress the influence of X-ray radiation in LTPS TFTs owing to a decrease in the absolute amount of GBs in the channel region. 29,30)…”

Section: Resultsmentioning

confidence: 99%

Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

Wei

Lee

et al. 2017

Jpn. J. Appl. Phys.

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Typically, each element in a large-area flat-panel X-ray image sensor consists of a photodetector and amorphous silicon (a-Si) thin-film transistor (TFT) switches. In order to reduce noise, increase sensor dynamic range, and increase carrying capacity, the low-temperature polycrystalline-silicon (LTPS) TFTs have been proposed as a candidate to replace the a-Si TFTs. However, there are concerns regarding the impact of X-ray radiation in LTPS-TFTs, and several studies have been conducted to inquire into the same. In this paper, we show that LTPS TFTs with small channel length (<2 µm) are almost immune to X-ray radiation.

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Section: Resultsmentioning

confidence: 99%

Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

Wei

Lee

et al. 2017

Jpn. J. Appl. Phys.

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“…2) In addition, at low V g and V d , the current is found to be linear with V d and dependent on the reciprocal of channel length. 17) These observations suggest that the current at around flat-band voltage and low drain bias is dominated by the channel resistance as a function of bulk polysilicon resistivity. Referring to ref.…”

Section: Modeling Leakage Currentmentioning

confidence: 95%

Leakage Current Model of Polycrystalline Silicon Thin-Film Transistors for Device Characterization and Circuit Simulation

Deng

Zheng

Chen

2007

jjap

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Carrier emission due to trap states is considered to be the most important factor influencing the leakage generation of polycrystalline silicon thin-film transistors (poly-Si TFTs). An analytical relation between the field enhanced emission rate ratio and electric field is proposed, which accounts for the Poole-Frenkel effect. The proposed relation needs no numerical integration, and both the relation and its first derivative are continuous, which are critical in circuit simulation. The maximum electric field near the drain is calculated taking density of trap states into account. The leakage current is studied. And its variations with gate and drain voltages are compared with available experimental data. The temperature dependence of leakage current is also shown. The results show an excellent agreement with experimental data.

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Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors

Sakri

Glaunec

Colin

et al. 1989

Springer Proceedings in Physics

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Inversion-mode MOSFET's in polycrystalline Silicon thin films: Characterization and modeling

Cited by 20 publications

References 14 publications

Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

Leakage Current Model of Polycrystalline Silicon Thin-Film Transistors for Device Characterization and Circuit Simulation

Effect of the Grain Boundaries in Small Grain Polysilicon Thin Film Transistors

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