2003
DOI: 10.1007/978-3-662-09280-4_9
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Inverse Photoelectron Spectroscopy

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Cited by 181 publications
(252 citation statements)
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“…4, the in situ spin-integrated UPS and the HAXPES results fundamentally agree although the information depth of both experiments varies from 2 nm to 20 nm. This provides evidence that true surface states like Shockley or Tamm states, which are mainly located at the first atomic layer30, do not contribute to the UPS data.…”
Section: Resultsmentioning
confidence: 83%
“…4, the in situ spin-integrated UPS and the HAXPES results fundamentally agree although the information depth of both experiments varies from 2 nm to 20 nm. This provides evidence that true surface states like Shockley or Tamm states, which are mainly located at the first atomic layer30, do not contribute to the UPS data.…”
Section: Resultsmentioning
confidence: 83%
“…Note that the PE and IPE spectra contain information about the density of states of the occupied and unoccupied bands, respectively. Therefore, the combination of PE and IPE spectroscopies has been established as the most direct method for determining an electronic energy gap23. To avoid possible sample charging effects, we adjusted source fluxes for both ARPES and IPE experiments as shown in the insets of Fig.…”
Section: Resultsmentioning
confidence: 99%
“…When the incident photon energy is 600 eV, which is used in the present measurements, the electron kinetic energy originating from Ga 3d core level is 580 eV, and corresponds to about 10 Å. 12 The maximum escape depth can be assumed to be about three times (1/e 3 ϭ0.05) or 30 Å in this case. As seen in Table II, the ratio of Ga/N of the ICP-treated sample is nearly the same as that of the as-grown one above ϭ60°.…”
Section: Observation Of Inductively Coupled-plasma-induced Damage On mentioning
confidence: 99%