2014
DOI: 10.1016/j.nimb.2014.09.006
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Inverse modeling of FIB milling by dose profile optimization

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Cited by 9 publications
(5 citation statements)
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“…In addition to the direct flux of incident ions , a number of indirect fluxes significantly influences the evolution of the surface [ 30 ]. In the following description, we consider the flux of redeposited atoms and fluxes due to backscattering of incident ions.…”
Section: Resultsmentioning
confidence: 99%
“…In addition to the direct flux of incident ions , a number of indirect fluxes significantly influences the evolution of the surface [ 30 ]. In the following description, we consider the flux of redeposited atoms and fluxes due to backscattering of incident ions.…”
Section: Resultsmentioning
confidence: 99%
“…During RIE, the physical ion milling is well known to lead to the erosion of atoms from the material, but also the redeposition of sputtered atoms [40]. The sputter-eroded gold may redeposit on the sample again, as described in [41,42]: forward scattering from the sidewalls of the gold hard mask may redeposit in etch trenches and backscattering of the sputtered gold via collision with gas atoms in the plasma will redeposit small amounts of gold on more remote sample surfaces. The material redeposition during ion milling has been extensively studied and simulated [43], especially for focused ion beam milling [44] and for RIE [45].…”
Section: Nanoimprint Master Fabricationmentioning
confidence: 99%
“…The ion beam-induced physical sputtering does not cause a complete material removal. Instead, the material is locally redistributed [ 15 ]. The phenomenon is known as redeposition and can be minimized by varying the slow beam direction [ 17 ], that is, for line-by-line scanning, by starting from the first line in the first repeat and from the last line in the second repeat.…”
Section: The Fib-o-mat Toolboxmentioning
confidence: 99%
“…This is a great benefit over the manufacturer-specific patterning options that allow for grey-scale patterning, where the grey values encode local doses. The results of the patterning can be improved through modeling of the relevant processes in FIB machining, especially angle-dependent physical sputtering [ 11 ] and redeposition [ 15 ], or geometric considerations [ 12 ]. In the same manner, locally varying doses in He ion-based resist patterning may be corrected based on heuristic modeling employing a point spread function that sums up all physical and chemical processes in resist activation [ 16 ].…”
Section: Introductionmentioning
confidence: 99%