Introduction of helium into metals by magnetron sputtering deposition method

He, Zheng; Liu, S.; Yu, Hui; Wang, L.B.; Liu, C.Z.; Shi, Liqun

doi:10.1016/j.matlet.2004.12.008

Cited by 24 publications

(18 citation statements)

References 15 publications

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“…Considering the binding energy of a He atom to a pre-existing vacancy, 0.96 eV, the comparable binding ability of two He atoms (0.66 eV) may be responsible for the experimental observation [5]: when the He concentration is only a few tens of appm in a-Ti, the distribution of He bubbles correlated little to grain boundaries and dislocations, which are in the vacancy-rich zones. When the He concentration is high enough to be accommodated by the limited vacancy inside the grain, more He bubbles distribute in grain boundaries and dislocations [9].…”

Section: Clustering Of He Atomsmentioning

confidence: 99%

“…It is normally insoluble in metals or metals tritides due to its inert reactivity with other elements, thereby precipitating as high-inner-pressured bubbles [1][2][3][4][5][6][7][8][9][10] that is responsible for the degradation of material properties and the shortening of lifetime for nuclear reactor components. Therefore, to study mechanism of trapping He and to learn its behaviors in metals make significant sense to nuclear industry.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the majority of calculations based on empirical potentials (EPs) [11][12][13][14][15][16][17][18][19][20] or density functional theory (DFT) [21][22][23][24][25][26] was performed for He only in both fcc and bcc metals. Theoretical study on He in hcp Ti has not been reported yet with respect to many experimental studies done [5,9,[27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomistic properties of helium in hcp titanium: A first-principles study

Wang

Shi

Lijian

et al. 2010

Journal of Nuclear Materials

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Section: Clustering Of He Atomsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Atomistic properties of helium in hcp titanium: A first-principles study

Wang

Shi

Lijian

et al. 2010

Journal of Nuclear Materials

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“…In fusion reactors, He ++ and He + ions produced in the plasma can directly implant into materials. However, as far as we know, only a few studies have been centered on the influences of He on Zr, mainly some experimental works on the surface phenomenology [22,23] and He bubble formation [12,24]. It is found that helium can easily form bubbles and these bubbles preferentially distribute in grain boundaries and dislocations.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of the Structural Stability and Electronic and Elastic Properties of Helium inα-Zirconium

Zheng

Zhang

Zhou

et al. 2014

Advances in Condensed Matter Physics

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First-principles calculations within density functional theory have been performed to investigate the behaviors of helium inα-zirconium. The most favorable interstitial site for He inα-Zr is not an ordinary tetrahedral or octahedral site, but a basal octahedral site with a formation energy as low as 2.40 eV. The formation energy reduces to 1.25 eV in the presence of preexisting vacancies. The analysis on the density of states and the charge density has been carried out. In addition, the influences of He and small He-V complexes on the elastic properties have been studied. The He-V complexes have been found to greatly affect the elastic properties compared with He alone.

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“…At the same time, some helium atoms diffuse out of the surface and others are captured by new depositional Ti atoms. For another, the release of helium atoms of Ti films is fulminic at high temperature and a large amount of the helium atoms should not burst out of the surfaces until Ti films can not hold more helium at special temperature just like thermodesorption results [12,13] . Besides, the crystal size of the two samples probably changes a little (diffraction patterns of the two samples are alike from Figure 3) so that the concentration He/Ti is the same on the whole.…”

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confidence: 99%

Effects of helium on titanium films and the helium diffusion

et al. 2008

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Using direct current-magnetron sputtering, Helium-trapped Ti films with a He/Ar mixture was studied. The relative helium content, helium depth profiles for the Ti films and crystallization capacity were analyzed by Enhanced Proton Backscattering Spectrometry (EPBS) and X-ray diffraction (XRD). It was found that helium diffusion enhanced as more helium trapping into Ti films, and the He holding ratios were 95.9%, 94.9%, 93.9%, 82.8% when the Ti films with the He/Ti of concentrations of 9.7 at.%, 19.5 at.%, 19.7 at.%, 48.3 at.% were measured again 4 months later, respectively. The diffraction peaks became weak and wider, the peak of (002) plane was shifted to smaller diffraction angles and the relevant interplanar spacing d (hkl) increased gradually as more helium trapping into Ti films. The main peak was made trending to the (101) plane by both higher deposition temperature and more helium trapping. magnetron sputtering, relative helium content, titanium filmThe study of "Helium Problems" in metals is referred to in many realms of nuclear energy technology [1][2][3][4][5] . It is very important to the research of the characteristics of keeping tritium materials for using nuclear energy peaceably and militarily. The pure metal of titanium is considered as the best material of keeping tritium, which is used as tritium target usually. 3 He produced from tritium disintegration is migratory in metals and has a strong tendency to get together at room temperature. Metal atoms are piled out of the original places and helium bubbles come into being when helium atoms get together to a critical range [6][7][8][9] . The helium bubbles grow up gradually and become dense with the increasing of 3 He atoms in metals. The large number of helium bubbles in metal will debase the capability of the material. This is the first problem to produce helium within these materials expediently and speedily. In order to study helium diffusion, a large number of helium is uniformly introduced into metals with no displacement damage by direct current (DC)-magnetron sputtering (there is low energy helium implantation in the technics).Helium charging in the Ti films was usually deposited starting at room temperature (not being heated up) or keeping at high constant temperature in previous literatures. No reports have been found that the deposition is completed by combining the two steps. We now conduct these experiments because it is advantageous to the study of helium diffusion and the best helium-charged capability of Ti films at high temperature (the relative helium content of which deposited just at high constant temperature is very rare but quite common at room temperature [10,11] ).A Ti disk (99.99% in purity, 65 mm in diameter and 7 mm in thickness) was used as the target. The distance between the target and the substrate (Mo, φ18×1 mm) was adjusted to 55 mm. All the substrates were fastened on a holder which could be heated by a resistive heater, and a −60 V bias was applied to the holder. The sub-

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Introduction of helium into metals by magnetron sputtering deposition method

Cited by 24 publications

References 15 publications

Atomistic properties of helium in hcp titanium: A first-principles study

Atomistic properties of helium in hcp titanium: A first-principles study

First-Principles Study of the Structural Stability and Electronic and Elastic Properties of Helium inα-Zirconium

Effects of helium on titanium films and the helium diffusion

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