Introduction

Faupel, Franz; Dimitrakopoulos, Christos; Kahn, Antoine; Wöll, Christof

doi:10.1557/jmr.2004.0280

Cited by 21 publications

(16 citation statements)

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“…[1] In this area, a major goal consists in the realisation of fully organic devices by employing low-cost solution processes. [2] However, the transition towards plastic electronics is starting by using still 'conventional' processes based on the present silicon-technology to be employed at low temperature, e.g.…”

Section: Introductionmentioning

confidence: 99%

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Scandurra

Indelli

Pignataro

et al. 2008

Surface & Interface Analysis

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This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100• C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5 : 1, 2 : 1 and 1 : 1 Ar : N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed an increase in resistivity ongoing from the Ta 2 N phase to the Ta 3 N 5 one. The electrical properties of these films are comparable to those obtained by high temperature deposition process already reported in literature. Furthermore, a roughness and grain size modulation of the above films can be obtained by applying an RF negative bias during deposition without affecting the electrical resistivity.

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Section: Introductionmentioning

confidence: 99%

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Scandurra

Indelli

Pignataro

et al. 2008

Surface & Interface Analysis

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“…For applications of tetracyano-1,3-butadienes in photonics and non-linear optics, see: Faupel et al (2007). For the preparation and structure of 10-(prop-1-yn-1-yl)-10H-phenothiazine, see: Zaugg et al (1958); Umezono & Okuno (2012).…”

Section: Related Literaturementioning

confidence: 99%

“…Tetracyano-1,3-butadienes, which are prepared by TCNE addition to acetylene compounds carrying an electron donating part, have been attracted interest from the viewpoint of applications in photonics and nonlinear optics (Faupel et al, 2007). The title compound, C 21 H 11 N 5 S 1 , is a TCNE adduct of 10-(prop-1-yn-1-yl)-10H-phenothiazine which is known as the first ynamine compound (Zaugg et al, 1958).…”

Section: S1 Commentmentioning

confidence: 99%

2-Methyl-3-(10H-phenothiazin-10-yl)buta-1,3-diene-1,1,4,4-tetracarbonitrile

Okuno

Iwahashi

2013

Acta Cryst E

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In the title compound, C21H11N5S, the phenothiazine unit has a butterfly structure, and the central six-membered ring adopts a boat conformation. The dihedral angle between the benzene rings is 127.64 (6)°, which is smaller than those reported for similar compounds because of the steric repulsion between the phenothiazine and its tetracyano-1,3-butadiene substituent. The dicyanovinyl groups are almost orthogonal to one another, making a dihedral angle of 80.58 (6)°. In the crystal, the molecules are aligned along the b axis. Four kinds of weak C—H⋯N interactions are recognized, one of which connects the molecules into a one-dimensional array and the remaining three link these arrays.

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“…Electronics based on printable and largely organic conductors, dielectrics, and semiconductors, with OFETs as the core devices, have become a research area in their own right and have spurred significant investment by established and emerging companies. [1][2][3][4] Work on OFETs has been extensively reviewed, 3,5-8 most notably and comprehensively in Chemistry of Materials, Materials Today, and Journal of Materials Research special issues. [8][9][10][11][12][13] Several monographs have also been assembled, with representation from dozens of major research organizations.…”

Section: Introductionmentioning

confidence: 99%

Organic Semiconductor Devices with Enhanced Field and Environmental Responses for Novel Applications

Someya¹,

Pal²,

Huang³

et al. 2008

MRS Bull.

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We discuss some recent advances in the use of organic semiconductor devices with additional or enhanced functionality beyond simple electrical switching. These include diodes that act as local temperature sensors or that filter reverse-bias currents at tens of megahertz frequency. Transistors are described with a range of sensing and reporting functions, for such properties as pressure, magnetic field, and chemical vapor. Because these devices will likely be employed in arrays and assemblies, we also present concepts of some larger, integrated components such as artificial skin, sensor arrays, and wireless power systems. The common theme of these devices is that they build on an extensive and growing understanding of the parent transistors and diodes, but represent a departure into new physical phenomena and application areas.

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Introduction

Cited by 21 publications

References 0 publications

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

2-Methyl-3-(10H-phenothiazin-10-yl)buta-1,3-diene-1,1,4,4-tetracarbonitrile

Organic Semiconductor Devices with Enhanced Field and Environmental Responses for Novel Applications

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