Introducing Ohmic Contacts into Silicon Carbide Technology

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

“…It is generally known that forming Ohmic contact to WBG semiconductors require not only a highly doped surface region, but also a relative high temperature (around 1000 °C) post-metallisation annealing (PMA) step. The PMA step generates an intermediate semiconductor layer (silicide or carbide) with narrower bandgap to reduce the Schottky barrier height (SBH) as well as creating more free carriers at the contact interface [1]. This additional step increases the fabrication thermal budget and complicates the WBG semiconductor applications in technologies which are sensitive to heat treatments, such as high-k, organic semiconductors, semiconductor heterojunctions etc.…”