Introducing electron capture into the unitary-convolution-approximation energy-loss theory at low velocities

Schiwietz, G.; Grande, P.L.

doi:10.1103/physreva.84.052703

Cited by 51 publications

(17 citation statements)

References 53 publications

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“…Despite these complications different models permit a good qualitative and quantitative prediction of S for almost any compound [9][10][11][12][13][14][15], down to energies around the stoppingpower maximum, and large compilations of experimental and theoretical data for many different materials are available [16]. These compilations, however, also illustrate the increased uncertainty or complete lack of both experimental and theoretical data towards lower energies.…”

Section: Introductionmentioning

confidence: 99%

Electronic interactions of medium-energy ions in hafnium dioxide

Primetzhofer

2014

Phys. Rev. A

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In this article, the electronic interaction of medium-energy ions with hafnium dioxide is studied. Stopping cross sections for He ions in the energy range from 30 to 160 keV have been measured in backscattering experiments from thin films of HfO 2 on Si using time-of-flight medium-energy ion scattering. The observed energy loss for helium ions is found to be high compared to expectations from earlier results for hydrogen in HfO 2 , a result which indicates a contribution from energy-loss processes that is different from direct excitation of electron-hole pairs in close collisions. Furthermore, data exhibit a significant deviation from velocity proportionality. A discussion of the results, together with data from studies for H and He in SiO 2 , show characteristic differences which are traced back to different electronic structures of the target materials and their influence on the charge-exchange channels that are active in the interaction with helium. Charge exchange, in turn, via shifted mean-charge states, will influence the observed ionization along the ion track. The results can furthermore serve as reference values for ion-beam-based depth profiling at medium and low ion energies.

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Section: Introductionmentioning

confidence: 99%

Electronic interactions of medium-energy ions in hafnium dioxide

Primetzhofer

2014

Phys. Rev. A

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“…A new CasP calculation by Schiwietz and Grande 21 includes electron capture by the projectile (see Fig. 3).…”

Section: Measurements and Theoriesmentioning

confidence: 99%

New results about stopping power for positive ions: Experiment and theory

Paul¹

2013

AIP Conference Proceedings

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“…Since the data from the electrostatic analyzer and the magnetic sector analyzers require neutralization corrections, the Marion and Young's correction was used for 100‐keV H + and He + ions and the Armstrong's one for 400‐ to 500‐keV He + ions. The recently developed CASP algorithm for charge state fractions can also be used for a better reliability with He + and for heavier ions …”

Section: Meis Spectrum Simulationmentioning

confidence: 99%

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO₂/SiO₂/Si films

Min¹,

Marmitt

Grande

et al. 2019

Surface & Interface Analysis

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Medium‐energy ion scattering (MEIS) has been used for quantitative depth profiling with single atomic layer resolution to determine the composition, thickness, and interface structure of ultrathin films and nanoparticles. To assure the consistency of the MEIS analysis, an international round‐robin test (RRT) with nominally 1‐, 3‐, 5‐, and 7‐nm thick HfO2 films was conducted among 12 institutions. The measurements were performed at each participating laboratory under their own conditions, and the collected data were analyzed. For the data analysis, the Moliere potential, the stopping and range of ions in matter (SRIM) 95 and new fitted electronic stopping power and the Chu straggling were used. For analyzing the MEIS data from the magnetic sector and electrostatic analyzers, the neutralization corrections of Marion and Young for 100‐keV H+ and He+ ions and of Armstrong for 400‐ to 500‐keV He+ ions were used. The standard deviations were 5.3% for the composition, 15.3% for the thickness, and 13.3% for the Hf content, and they were improved to 7.3%, 4.5%, and 7.0% by using refitted electronic stopping powers based on the experimental data. Hence, this study suggests that correct electronic stopping powers are critical for quantitative MEIS analysis.

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Introducing electron capture into the unitary-convolution-approximation energy-loss theory at low velocities

Cited by 51 publications

References 53 publications

Electronic interactions of medium-energy ions in hafnium dioxide

Electronic interactions of medium-energy ions in hafnium dioxide

New results about stopping power for positive ions: Experiment and theory

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO₂/SiO₂/Si films

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Introducing electron capture into the unitary-convolution-approximation energy-loss theory at low velocities

Cited by 51 publications

References 53 publications

Electronic interactions of medium-energy ions in hafnium dioxide

Electronic interactions of medium-energy ions in hafnium dioxide

New results about stopping power for positive ions: Experiment and theory

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO2/SiO2/Si films

Contact Info

Product

Resources

About

Round‐robin test of medium‐energy ion scattering for quantitative depth profiling of ultrathin HfO₂/SiO₂/Si films