Intrinsically Switched Varactor-Tuned Filters and Filter Banks

Guyette, Andrew C.

doi:10.1109/tmtt.2012.2184131

Cited by 70 publications

(33 citation statements)

References 13 publications

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“…Устройства на основе микро-полосковых линий нашли широкое применение в электронике из-за низкой стоимо-сти производства и миниатюрных размеров. Наиболее распространеными методами пере-стройки резонансной частоты микрополоскових резонаторов являются использование варкторов [1], p-i-n-диодов [2], микроелектромеханических систем (МЕМС) [3,4]. МЕМС, в отличии от варак-торов и p-i-n-диодов, обеспечивают больший диапазон перестройки частоты и плавное изме-нение во всем диапазоне.…”

Section: в работе рассмотрены микромеханически перестраиваемые полоснunclassified

Influence of Topological Parameters on Tuning Band of Micromechanically Controlled Microstrip Resonators

Chernov¹,

Kazmirenko²,

Vandenbosch³

et al. 2017

Electronics and Communications

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Section: в работе рассмотрены микромеханически перестраиваемые полоснunclassified

Influence of Topological Parameters on Tuning Band of Micromechanically Controlled Microstrip Resonators

Chernov¹,

Kazmirenko²,

Vandenbosch³

et al. 2017

Electronics and Communications

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“…The switched circuits of the four switched filter banks in [8][9][10][11] are designed using RF MEMS chips or PIN diodes, and the whole switched filter banks are designed based on silicon substrate or PCB technology. Compared with the four other switched banks, the design in this paper offers 8 channels for frequency selection, and more selections can be realized by using this filter bank.…”

Section: Test and Analysismentioning

confidence: 99%

Monolithic Integrated Design of S-Band Switched Filter Bank Based on LTCC Technology

Yang¹,

Ming²,

Guo³

et al. 2017

PIER C

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Abstract-A S-band monolithic integrated switched filter bank has been designed to realize tunable working center frequency, and a tuning range of 12.9% from 2.7 to 3.05 GHz was achieved with interval of 50 MHz. The switched filter bank is designed using 8 eighth-order step impedance resonators (SIR) band-pass filters arranged in parallel rows. Microelectromechanical Systems (MEMS) switched circuit is integrated above filters for monolithic design combined with low temperature co-fired ceramic (LTCC) technology. The SIR bandpass filters are designed to resist Electromagnetic Interference (EMI) between components and introduce cross coupling to bring two transmission zeros and better out-ofband rejection. The monolithic integrated switched filter bank is only 74 mm × 24 mm × 2.5 mm, which realizes the monolithic integration of the device and enhances the reliability. The measured results show that the insertion loss and out-of-band rejection are in good working condition.

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“…This paper presents for the fust time filters that use the concept in [3] in a way that is appropriate for electrically-short resonators that do not provide the opportunity for differential tuning and coupling over significant phase lengths. They are implemented with highly-loaded coaxial cavity resonators [4] that have a single tuning element and higher Q, enabling narrower bandwidth, deep notches, and fewer control voltages.…”

Section: Introductionmentioning

confidence: 99%

High-Q intrinsically-switched quasi-absorptive tunable bandstop filter with electrically-short resonators

Naglich

Guyette

Peroulis

2014

2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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Tunable high-Q intrinsically-switchable quasi absorptive bandstop filters are presented in the 4 GHz to 6 GHz and 6.3 GHz to 11.4 GHz frequency ranges. Their responses can be reconfigured between all pass and tunable bandstop filter responses by simply tuning the center frequency of their resonators, avoiding insertion loss and control voltages associated with the series switches required in conventional bandstop filter banks that have similar response reconfiguration capability. In contrast to previously shown intrinsically-switchable bandstop filters, the filters shown in this paper require only one tuning element per resonator, have a significantly higher quality factor (650), and use electrically-short resonators. When combined with destructive interference attenuation enhancement techniques, these characteristics enable >60 dB maximum attenuation in the bandstop state and less than 2.0 dB insertion loss in the all pass state.

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Intrinsically Switched Varactor-Tuned Filters and Filter Banks

Cited by 70 publications

References 13 publications

Influence of Topological Parameters on Tuning Band of Micromechanically Controlled Microstrip Resonators

Influence of Topological Parameters on Tuning Band of Micromechanically Controlled Microstrip Resonators

Monolithic Integrated Design of S-Band Switched Filter Bank Based on LTCC Technology

High-Q intrinsically-switched quasi-absorptive tunable bandstop filter with electrically-short resonators

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