Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process

Abstract

In recent years, stretchable electronics have attracted great attention because of their broad application prospects such as in the field of wearable electronics, skin-like electronics, medical transplantation and human–machine interaction.

Stretchable conductors for stretchable field-effect transistors and functional circuits

“…392 Zhang et al suggested a photolithography-based process to attain intrinsically stretchable TFTs. 170 Carbon tube electrodes were fabricated by deposited silicon dioxide layers as a plasma-resistant layer on SEBS dielectrics and PDMS substrate. Even after being stretched by 50% for 500 times, the FET demonstrated outstanding carrier mobility of 2.01 cm 2 V −1 s −1 .…”

Gold Nanoparticles as Effective ion Traps in Poly(dimethylsiloxane) Cross-Linked by Metal-Ligand Coordination

“…Such a modification made it possible to manufacture low-voltage organic thin-film transistors with suitable bending stability. Other works describe the application as a gate dielectric of a variety of composite materials: polyvinyl alcohol/SiO 2 [ 5 ], ZrTiHfO 2 -PVP [ 6 ], poly(vinyl alcohol)/2D TiO 2 nanosheets [ 7 ], as well as block copolymer elastomers [ 8 , 9 ].…”

Improvement in Mechanical Durability of Stretchable Charge-Trap Memory Transistors with Engineered Wavy-Dimensional Structures

“…The first strategy involves the use of intrinsically stretchable materials. 1,2,17,18 One of the key challenges is to design the system so that the material sets constituting the devices can withstand higher levels of mechanical strain (≫1%) without fracture or significant degradation in the electronic properties. 19,20 In this respect, it is desirable to implement the devices with completely stretchable components instead of brittle materials with a fracture strain of <2%.…”

“…Stretchable electronics have attracted tremendous interests due to their versatile capability to function even under complexed deformations. − Alternatively, future “intelligent” stretchable electronic modules will require the integration of multiple core electronic devices, such as transistors, memory, light-emitting diodes, and batteries. − Especially, for realizing these applications such as wearable electronic skin, health care devices, and human–machine interfaces, an embedded flexible nonvolatile memory (NVM) device is required as a key element for storing information as well as for saving power consumption. − It has rarely been reported on available results regarding the stretchable NVM devices, while other functional devices have been actively developed. A charge-trap memory thin-film transistor (CTM-TFT) employing oxide channel and charge-trap layer (CTL) can be a promising candidate for highly functional stretchable memory device.…”

“…Meanwhile, lots of previous works have proposed various methodologies to improve the stretchability, which can be classified into main two categories. The first strategy involves the use of intrinsically stretchable materials. ,,, One of the key challenges is to design the system so that the material sets constituting the devices can withstand higher levels of mechanical strain (≫1%) without fracture or significant degradation in the electronic properties. , In this respect, it is desirable to implement the devices with completely stretchable components instead of brittle materials with a fracture strain of <2% . However, these materials have critical issues of thermal/chemical stability as well as patterning process compatibility to conventional photolithography process. ,, Furthermore, the materials exhibiting mechanical stretchability, such as organic thin films, have inferior electronic performance, and hence, the material choices are inevitably limited for achieving state-of-the-art stretchable memory …”