Most current thermoelectric materials have important
drawbacks,
such as toxicity, scarceness, and peak operating temperatures above
300 °C. Herein, we report the thermoelectric properties of different
crystalline phases of Sn-based perovskite thin films. The 2D phase,
Cs
2
SnI
4
, is obtained through vacuum thermal
deposition and easily converted into the black β phase of CsSnI
3
(B-β CsSnI
3
) by annealing at 150 °C.
B-β CsSnI
3
is a p-type semiconductor with a figure
of merit (ZT) ranging from 0.021 to 0.033 for temperatures below 100
°C, which makes it a promising candidate to power small electronic
devices such as wearable sensors which may be interconnected in the
so-called Internet of Things. The B-β phase is stable in nitrogen,
whereas it spontaneously oxidizes to Cs
2
SnI
6
upon exposure to air. Cs
2
SnI
6
shows a negative
Seebeck coefficient and an ultralow thermal conductivity. However,
the ZT values are 1 order of magnitude lower than for B-β CsSnI
3
due to a considerably lower electrical conductivity.