1990
DOI: 10.1557/proc-188-85
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Intrinsic Stress of Pecvd Silicon Oxynitride Films Deposited in a Hot-Wall Reactor

Abstract: Plasma enhanced chemical vapor deposited ( PECVD ) silicon oxynitride films with refractive indices varying from 1.65 to 1.85 have been deposited in a hot-wall reactor using a SiH4/NH3/N2O gas mixture. A systematic investigation of the variation of the intrinsic stress of the deposited films with the parameters of deposition and the properties of the films, has been carried out. Our results show that silicon oxynitride films deposited in optimal conditions can support annealing temperatures of 900°C without cr… Show more

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