Intrinsic hole mobility and trapping in a regioregular poly(thiophene)

Salleo, Alberto; Chen, T. W.; Völkel, A. R.; Wu, Yuh‐Renn; Liu, P.; Ong, Beng S.; Street, R. A.

doi:10.1103/physrevb.70.115311

Cited by 236 publications

(225 citation statements)

References 44 publications

(51 reference statements)

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“…The total charge density includes both the free and trapped charges: Q total ¼ e(n loc þ n band ) where n loc and n band refer to the density of occupied states below and above the mobility edge, respectively. Another commonly used transport coefficient in a disordered system is the 'band mobility' 53,54 . It is defined as the ratio of the measured conductivity to the density of occupied states above the mobility edge (that is, extended states):…”

Section: Resultsmentioning

confidence: 99%

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

et al. 2014

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Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

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Section: Resultsmentioning

confidence: 99%

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

et al. 2014

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“…37 We note that the carrier concentration in these experiments is derived via a wellcontrolled n-type doping of the films whereby it can be assumed that each dopant provides one electron to the system; therefore, the electron concentration can be given in terms of the molar ratio (MR) of the dopant vs. host. The results obtained from the KMC simulations and from the ME model 19,20,46 are shown in Fig. 7 along with experimental data.…”

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confidence: 99%

“…1b). As mentioned above, according to the ME model, 19,20,46 the total charge density ( e N ) is split into mobile ( M n ) and immobile ( I n ) carriers. In this model, only mobile charges contribute to the overall current and thus to the conductivity.…”

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Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

2013

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We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C 60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level.

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“…In such materials, one is entering a regime where mobility-edge models become much more physically reasonable. [27][28][29][30] To really test transport models based on amorphous materials therefore requires the use of amorphous, glassy organic semiconductors. Fluorene-triarylamine copolymers are specifi cally designed to be amorphous, with high glass transition temperatures, for use as interlayer and hole transport layer materials in polymer light emitting diodes.…”

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confidence: 99%

Charge‐Carrier Density Independent Mobility in Amorphous Fluorene‐Triarylamine Copolymers

Campbell

Rawcliffe

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et al. 2016

Adv Funct Materials

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3720 wileyonlinelibrary.com (OPVs), and organic fi eld-effect transistors (OFETs). A crucial parameter in the development of these technologies is the OSC charge-carrier mobility, and how it is related to the different OSC materials, processing, device architectures, and device operating conditions. Many semiconducting polymers and small molecules are amorphous, and such disorder in the physical morphology is expected to refl ect itself in disorder of the energy levels of the hole and electron transport states ( Figure 1 a). Such energetic disorder will directly impact charge transport and mobility. [1][2][3][4][5][6][7][8][9][10][11][12] For such energetically disordered OSCs, one feature predicted by many charge transport models is a charge-carrier density dependent mobility. The original Gaussian disorder model (GDM) developed by Bässler for hopping transport in a Gaussian density of states (DOS) distribution was a single carrier approach, [ 1 ] as were the models based on it which considered both correlated energetic disorder, [ 2 ] with a smoothly varying energy landscape (see Figure 1 a), and the effect of polaronic relaxation. [ 3 ] The percolation model developed by Vissenberg and Matters for transport involving an exponential DOS instead considered multiple carriers, [ 4 ] and this predicted a mobility which has a power-law dependency on the charge-carrier density. The measured transistor mobility falls two to three orders of magnitude below that predicted from the charge-carrier density dependent model, and does not follow the expected power-law relationship. The experimental results for these two amorphous polymers are therefore consistent with a charge-carrier density independent mobility, and this is discussed in terms of polaron-dominated hopping and interchain correlated disorder.

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Intrinsic hole mobility and trapping in a regioregular poly(thiophene)

Cited by 236 publications

References 44 publications

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

Charge‐Carrier Density Independent Mobility in Amorphous Fluorene‐Triarylamine Copolymers

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