Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Sarigiannidou, E.; Wilhelm, F.; Monroy, E.; Galéra, Rose-Marie; Bellet-Amalric, E.; Рогалев, А.; Goulon, J.; Cibert, J.; Mariette, H.

doi:10.1103/physrevb.74.041306

Cited by 121 publications

(108 citation statements)

References 24 publications

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“…In addition to (Ga,Mn)As, (Zn,Mn)Te:N, and related systems, recent indications of ferromagnetism in p- (Ga,Mn)N [98,99] and p-(Ga,Mn)P [100], appear to support the conclusion about the importance of delocalized or weakly localized carriers in mediating efficient spin-spin interactions. However, in those and other experimentally relevant cases, non-uniformity associated with hole localization, and perhaps with competing ferromagnetic and antiferromagnetic interactions, is seen to affect strongly ferromagnetic properties.…”

Section: Resultsmentioning

confidence: 82%

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Dietl

2007

Acta Phys. Pol. A

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In this paper the present understanding of the origin of ferromagnetic response that has been detected in a number of diluted magnetic semiconductors and diluted magnetic oxides at room temperature is outlined. It is argued that in these systems, owing to a typically small solubility of magnetic ions, crystallographic or chemical phase separation into regions with a large and a small concentration of magnetic component takes place. The ferromagnetic signatures then come from the regions with a large concentration of magnetic ions, which show non-zero spontaneous magnetization up to the blocking temperature, whose magnitude is proportional to the nanocrystal volume and magnetic anisotropy. Novel methods enabling a control of nano-assembling of magnetic nanocrystals in non-conducting matrices as well as possible functionalities of these spatially modulated magnetic systems are described. We also discuss phase separations into paramagnetic and ferromagnetic regions, which are driven by the Anderson-Mott localization and/or competing ferromagnetic and antiferromagnetic interactions. Finally, the question whether the high temperature ferromagnetism is possible in materials without magnetic ions is addressed.

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Section: Resultsmentioning

confidence: 82%

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Dietl

2007

Acta Phys. Pol. A

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“…We can detect an XMCD signal of the order of 0.013% at the Ga K-edge for 15 • grazing and normal incidence exhibiting relatively similar spectral features. Comparable spectral features have been recorded at the Ga K-edge of 2.7% Mn-doped GaN samples [7]; however, the size of the signal was about 0.1%, and the measurement temperature of 7 K is close to the respective Curie-temperature of that sample [6,7]. Therefore, we have to conclude that the magnetic polarization of the Ga sites is much weaker compared to Mn-doped GaN.…”

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confidence: 99%

“…The difference in the XANES spectra is therefore indicative of the presence of a substantial XLD effect as measured for the wurtzite crystallographic structure of GaN [5,6]. Figure 1(b) shows the respective XMCD spectra which were recorded at 7 K in an external field of ±6 T for grazing and normal incidence.…”

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confidence: 99%

Element specific magnetic properties of Gd-doped GaN: Very small polarization of Ga and paramagnetism of Gd

et al. 2008

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“…34 A similar case is the well known double-donor Mn interstitial in (Ga,Mn)As which compensates for acceptor substitutional Mn both electrically and magnetically, thus decreasing the Curie temperature. 35 Also, in Mn-doped GaN, the presence of donor defects controls the charge state of cation (Ga) substitutional Mn, hence the type of magnetic interactions: ferromagnetic for Mn 3+ , 36 antiferromagnetic for Mn 2+ . 37 …”

Section: Resultsmentioning

confidence: 99%

Mixed Zn and O substitution of Co and Mn in ZnO

et al. 2011

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The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies. In general, this occupancy can be correctly predicted based on chemical intuition, but not always. We report on one such exception in the dilute magnetic semiconductors (DMS) Co-and Mn-doped ZnO, experimentally determining the lattice location of Co and Mn using β − emission channeling from the decay of radioactive 61 Co and 56 Mn implanted at the ISOLDE facility at CERN. Surprisingly, in addition to the majority substituting for Zn, we find up to 18% (27%) of the Co (Mn) atoms in O sites, which is virtually unaffected by thermal annealing up to 900 • C. We discuss how this anion site configuration, which had never been considered before for any transition metal in any metal oxide material, may in fact have a low formation energy. This suggests a change in paradigm regarding transition metal incorporation in ZnO and possibly other oxides and wide-gap semiconductors.

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Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Cited by 121 publications

References 24 publications

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Element specific magnetic properties of Gd-doped GaN: Very small polarization of Ga and paramagnetism of Gd

Mixed Zn and O substitution of Co and Mn in ZnO

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