Intrinsic Ferroelectric Coercive Field

Ducharme, Stephen; Fridkin, V. M.; Bune, A. V.; Palto, S. P.; Blinov, L. M.; Petukhova, N.; Yudin, S. G.

doi:10.1103/physrevlett.84.175

Cited by 340 publications

(317 citation statements)

References 19 publications

(30 reference statements)

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“…It was shown for instance that ferroelectric properties exist in films of only a few monolayers [20]. A peculiar switching behavior characterized by intrinsic switching kinetics has been reported for ultrathin monolayers [21]. In polycrystalline thin films, however, a cold-field switching model was proposed to explain the observed nonthermally activated polarization switching [22].…”

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confidence: 98%

“…In parallel to the efforts concentrating on the development of nondestructive readout capability in ferroelectric memories [17] and on integration with a wide range of semiconductor systems [18,19], P(VDF-TrFE) represents a model system for exploring fundamentals of organic ferroelectrics [20][21][22]. It was shown for instance that ferroelectric properties exist in films of only a few monolayers [20].…”

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confidence: 99%

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Two-Step Polarization Switching in Ferroelectric Polymers

Jonas

et al. 2015

Phys. Rev. Lett.

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The correlation between hierarchical structures and polarization switching in ferroelectric poly (vinylidene fluoride-ran-trifluoroethylene) has been probed by combining transmission electron microscopy studies with piezoresponse force microscopy observations. Differences are demonstrated between homogeneous and anisotropic thin films with well-defined lamellar orientation, with the later exhibiting quadrangular domain shape and double hysteresis. We propose that the polarization switching within lamella is dominated by domain wall flow motion, while the amorphous components between lamellae impede full polarization switching. The coupling between lamellae is controlled by a creep process. These results and interpretations explain well the seemingly contradicting polarization reversal dynamics reported and offer opportunities to change domain reversal speed by making ferroelectric polymer nanostructures.

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confidence: 98%

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Two-Step Polarization Switching in Ferroelectric Polymers

Jonas

et al. 2015

Phys. Rev. Lett.

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“…Poly(vinylidene fluoridetrifluoroethylene), P(VDF-TrFE), is the best known and most widely used ferroelectric polymer because of its relatively high polarization value and electromechanical activity [1,2]. In spite of a very high coercive field required for switching [3], discovery of ferroelectricity in ultrathin P(VDF-TrFE) films with demonstrated electrical switchability in the range of just several volts [4] makes integration of these films into allorganic electronic systems more feasible. Recent fabrication of highly ordered arrays of P(VDF-TrFE) nanomesas for nonvolatile memories [5] underscored the importance of improving crystallinity to attain spatially uniform switching properties for device applications.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale domain patterns in ultrathin polymer ferroelectric films

Sharma

Reece

et al. 2009

J. Phys.: Condens. Matter

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High-resolution studies of domain configurations in Langmuir-Blodgett films of ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), have been carried out by means of piezoresponse force microscopy (PFM). Changes in film thickness and morphology cause significant variations in polarization patterns. In continuous films and nanomesas with relatively low thickness/grain aspect ratio (<1/10), the relationship between the average domain size and thickness follows the Kittel law. Nanomesas with high aspect ratio (>1/5) exhibit significant deviations from this law, suggesting additional surface-energy-related mechanisms affecting the domain patterns. Polarization reversal within a single crystallite has been demonstrated and local switching parameters (coercive voltage and remnant piezoresponse) have been measured by monitoring the local hysteresis loops. Reliable control of polarization at the sub-grain level demonstrates a possibility of studying the mechanism of the intrinsic switching behavior down to the molecular scale.

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“…4 This has stimulated a number of theoretical and experimental studies of ferroelectric properties in low dimensional systems, 5,6 including the size limit for ferroelectricity [7][8][9] and intrinsic switching 10 in thin films, and unusual polarization ordering in ferroelectric nanoparticles and nanowires. 11,12 Further progress in these fields necessitates fundamental studies of ferroelectric domain structures and dynamics and polarization-switching phenomena on the nanoscale.…”

Section: Introductionmentioning

confidence: 99%