Intrinsic Difference Between 2-D Negative-Capacitance FETs With Semiconductor-on-Insulator and Double-Gate Structures

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This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In 0.53 Ga 0.47 As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization P r . In addition, the inversioncharge boosting for the In 0.53 Ga 0.47 As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In 0.53 Ga 0.47 As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

Section: Resultsmentioning

confidence: 99%

Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

Huang

Lin

2020

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“…Early demonstrations typically used a reasonably long channel length to verify the existence of the NC effect. Researchers have recently attempted to merge the FE capacitor with conventional CMOS transistors, including FinFET and FDSOI structures [53]. In this context, FinFET has emerged as one of the best choices for achieving enough gate control over the channel owing to its superior performance in the subthreshold region [72]- [74].…”

Section: B Ncfet Device Performancementioning

confidence: 99%

Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

Islam

Mazumder

Zhou

et al. 2023

For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching the fundamental limits of silicon-based complementary metal-oxide-semiconductor (CMOS) devices, various emerging materials and device structures are considered alternative aspirants, such as negative-capacitance field-effect transistors (NCFETs), for their promising advantages in terms of scaling, speed, and power consumption. In this article, we present a brief overview of the progress made on NCFETs, including theoretical and experimental approaches, a current understanding of NCFET device physics, possible physical mechanisms for NC, and future functionalization prospects. In addition, in the context of recent findings, critical technological difficulties that must be addressed in the NCFET development are also discussed.

“…Based on the same reason, the timeto-write of 8T hybrid nvSRAM is comparable with the conventional 6T SRAM. A slight increase in time-to-write of a 8T hybrid nvSRAM cell results from the enhanced gate capacitance in the ferroelectric FinFET, especially for the ferroelectric FinFET with a thicker ferroelectric thickness (T FE ) [27], [28]. Nevertheless, the impact of enhanced gate capacitance of a ferroelectric FinFET on the read access time can be negligible due to the existence of the bit line capacitance which dominates the overall capacitance for the nvSRAM during the read operation.…”

Section: Read/write Snms and Performance Evaluationmentioning

confidence: 99%

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

You

2020

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This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption. INDEX TERMS Ferroelectric field-effect transistor FET, negative-capacitance FET (NCFET), FinFET, nonvolatile SRAM (nvSRAM), nonvolatile memory.