2012
DOI: 10.1103/physrevb.86.054106
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Intrinsic defects and conduction characteristics of Sc2O3in thermionic cathode systems

Abstract: Recent experimental observations indicate that bulk Sc 2 O 3 (~200 nm thick), an insulator at room temperature and pressure, must act as a good electronic conductor during thermionic cathode operation, leading to the observed high emitted current densities and overall superior emission properties over conventional thermionic emitters which do not contain Sc 2 O 3 . Here, we employ ab initio methods using both semilocal and hybrid functionals to calculate the intrinsic defect energetics of Sc and O vacancies an… Show more

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Cited by 24 publications
(27 citation statements)
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“…The values of ∆V obtained from different methods are within the same orders of magnitude (10 −2 eV) and the choice of ∆V does not change the magnitude of defect concentrations. In addition, a similar magnitude of ∆V has been observed in the literature 71 for other ionic materials.) A neutralization Jellium background charge was assumed by VASP to improve the energy convergence with respect to the supercell size.…”
supporting
confidence: 87%
See 1 more Smart Citation
“…The values of ∆V obtained from different methods are within the same orders of magnitude (10 −2 eV) and the choice of ∆V does not change the magnitude of defect concentrations. In addition, a similar magnitude of ∆V has been observed in the literature 71 for other ionic materials.) A neutralization Jellium background charge was assumed by VASP to improve the energy convergence with respect to the supercell size.…”
supporting
confidence: 87%
“…The charged defects were modeled by adding (for negatively charged defects) or subtracting (for positively charged defects) one background electron to/from the total valence electrons in the supercell. In this study, the electrostatic energy correction (∆V ≈ 0.03 eV) was obtained from the average electrostatic energy difference between the defected cell (e.g., V − Li ) and the perfect cell 53,71,72 . (We noted that there are other methods to estimate ∆V , e.g., by inspecting the electrostatic potential far away from the charged defect 56 .…”
mentioning
confidence: 99%
“…The positions of strontium atoms and defects in La 1.85 Sr 0.15 CuO 4 were taken from Xie et al 29 , who used the special quasirandom structure method to determine the placement of strontium dopants 38 . For the two types of O interstitial defects, the defects were inserted into the rock salt plane, and the oxide interstitial was positioned at approximate reduced cell coordinates of (0.15, 0.13, 0.25) (≈2.3 Å away from the nearest apical O) and the peroxide interstitial was positioned at approximate reduced cell coordinates of (0.18, 0.18, 0.21) (≈ 1.5 Å away from the nearest apical O), consistent with the work of Xie et al 29 Defect formation energy calculations were performed using standard defect thermodynamics models, as detailed elsewhere 29, 39 . In the cases where defects were calculated with lattice strain, the strain was imposed on the a -axis and b -axis lattice parameters, and the c -axis was allowed to fully relax.…”
Section: Methodsmentioning
confidence: 84%
“…For instance, Jacobs et al 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 larger than those of the GGA calculations by about 2 eV, but still lower than the experimental measurements by about 3 eV, for both materials. In addition, we evaluated the formation energies for two defect systems: a positively charged fluorine vacancy and neutral Schottky defect where lithium and fluorine vacancies are nearest neighbors.…”
Section: Iii2 Defect Thermodynamics In Lif and Nafmentioning
confidence: 99%