Intrinsic Charge Transport on the Surface of Organic Semiconductors

Abstract

The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, µ, and the growth of µ with cooling. The anisotropy of µ vanishes in the activation regime at lower temperatures, where the charge transport becomes dominated by shallow traps. The deep traps, deliberately introduced into the crystal by X-ray radiation, increase the field-effect threshold without affecting the mobility. These traps filled above the field-effect threshold do not scatter the mobile polaronic carriers.

BODIPY derivatives as n-type organic semiconductors: Isomer effect on carrier mobility

“…(10) and sequentially the absolute value of mobility Eq. (9) and (11). Previous research [65] suggested a method to evaluate the intermolecular geometric relaxation energy based on the electronic polarization P + that results from the interaction of the excess charge with both permanent and induced multipoles in surrounding molecules, and the P + can be obtained from the ultraviolet photoelectron spectroscopic (UPS) data of gas and solid phases [66,67].…”

“…The development of single-crystal organic field effect transistors (SCOFETs) makes it possible to explore intrinsic properties of these materials [9][10][11]. p-Type organic semiconductors such as pentacene, rubrene and derivatives of them have been investigated widely [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27].…”

Oxygen-Related Band Gap State in Single Crystal Rubrene

“…Rubrene (C 42 H 28 ) in single crystal form has emerged as an important aromatic molecular solid, showing the highest field effect transistor (FET) mobility to date among organics (20 cm 2 =V s) [3]. In addition, several studies suggest that bandlike transport is operative [3][4][5][6]. Electronic properties in rubrene are, however, highly sensitive to both atmospheric environment as well as material treatment.…”

“…In addition, several studies suggest that bandlike transport is operative [3][4][5][6]. Electronic properties in rubrene are, however, highly sensitive to both atmospheric environment as well as material treatment.…”

“…In particular, the origin of band gap states and their effect on electronic and optical characteristics are both controversial and important questions [1,2]. Rubrene (C 42 H 28 ) in single crystal form has emerged as an important aromatic molecular solid, showing the highest field effect transistor (FET) mobility to date among organics (20 cm 2 =V s) [3]. In addition, several studies suggest that bandlike transport is operative [3][4][5][6].…”