Intrinsic and extrinsic excitations in deep core photoelectron spectra of solid Ge

Kövér, L.; Novák, Mihály; Egri, Sándor; Cserny, I.; Berényi, Z.; Tóth, J.; Varga, D.; Drube, W.; Yubero, F.; Tougaard, S.; Werner, Wolfgang

doi:10.1002/sia.2134

Cited by 11 publications

(1 citation statement)

References 17 publications

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“…Additional data were taken on the Au film by varying the sample angle (Fig. 3d) and by varying the height at a fixed takeoff angle (45 • , Fig. 3c).…”

Section: Instrument Characterization For Quantitative Arxps Analysis mentioning

confidence: 99%

Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films’

Herrera-Gómez

Grant

Cumpson

et al. 2009

Surface & Interface Analysis

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Keywords: X-ray photoelectron spectroscopy; angle-resolved X-ray photoelectron spectroscopy; surface analysis; near-surface analysis; non-destructive depth profiling; maximum entropy; stratification; IUVSTA workshop; XPS; ARXPS; hard X-ray photoemission Introduction X-ray photoelectron spectroscopy is an established technique for the analysis of homogeneous surfaces. [1] Surfaces that are laterally inhomogeneous are analyzed ideally using other instruments that would be capable of measuring such lateral inhomogeneities. Changes in concentration with depth from the surface pose other challenges in determining the depth distribution of elements or the depth profile. For regions greater than 10 nm in depth from the surface, sputter depth profiling with an inert gas is the most commonly used method. This removes layers by sputtering, exposing new surfaces that are measured sequentially. Some problems with sputter depth profiling are (i) preferential sputtering of one element compared with another, (ii) sputterinduced changes in chemistry of compounds, (iii) intermixing between layers, (iv) changes in electrical charging when sputtering non-conducting materials and (v) roughening of the surface due to sputtering. Other techniques such as Rutherford Backscattering Spectrometry or backside Secondary Ion Mass Spectroscopy are also often used for depth profiling, but in general, they suffer from poor depth resolution and chemical specificity. However, the near-surface region is often of particular interest, and this region poses its own challenges for determining its depth distribution of elements. It is this region where Angle-Resolved * Correspondence to: A. Queretaro 76000, 841Report on ARXPS Workshop Fig. 1). Experts from the major equipment manufacturers were also invited to participate. The experts who attended the workshop came from 23 countries, all of which were member countries of IUVSTA, throughout Asia, Europe and North America.The goals of the workshop were to review and discuss the present limits of ARXPS, to discuss ways of acquiring and analyzing ARXPS data, to discuss the applications of ARXPS and to consider future developments in ARXPS. The scientific program of the workshop was arranged by A. Herrera-Gomez, J.T. Grant, P. Cumpson and M. Jenko. Registration, accommodation, meals and transportation were arranged by the Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales. The Local Committee was formed by Martín Yáñez-Limón (CINVESTAV-Querétaro), Wilfrido Calleja (INAOE-Puebla), Juan Luis Peña (CINVESTAV-Merida), with Diana Garcia Sotelo being the Workshop Secretary.Most of the workshop program was based on 1-h presentations followed by 20-min discussion. There were 21 invited reviews of specific topics and additional presentations by experts from the equipment manufacturers on their approaches for ARXPS. There were evening poster sessions where research areas using ARXPS were discussed at length. The workshop ran from 9 : 00 a.m. on Monday through 10 : 00 p.m. on Friday. There were ...

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“…Additional data were taken on the Au film by varying the sample angle (Fig. 3d) and by varying the height at a fixed takeoff angle (45 • , Fig. 3c).…”

Section: Instrument Characterization For Quantitative Arxps Analysis mentioning

confidence: 99%

Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films’

Herrera-Gómez

Grant

Cumpson

et al. 2009

Surface & Interface Analysis

Self Cite

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Atomic‐level characterization of materials with core‐ and valence‐level photoemission: basic phenomena and future directions

Fadley

2008

Surface & Interface Analysis

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In this overview, the basic concepts of core and valence photoelectron spectroscopy (photoemission), photoelectron diffraction, and photoelectron holography are introduced. Then some current developments in these techniques that should enhance their utility for atomic-level characterization of new materials and surface chemical processes are discussed, including measurements with hard X-ray excitation, standing-wave excitation, and ambient pressures in the multi-torr regime.

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Bonding and Electronic Structure of Phosphides, Arsenides, and Antimonides by X-Ray Photoelectron and Absorption Spectroscopies

Grosvenor

Cavell

Mar

2009

Controlled Assembly and Modification of Inorganic Systems

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Intrinsic and extrinsic excitations in deep core photoelectron spectra of solid Ge

Cited by 11 publications

References 17 publications

Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films’

Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films’

Atomic‐level characterization of materials with core‐ and valence‐level photoemission: basic phenomena and future directions

Bonding and Electronic Structure of Phosphides, Arsenides, and Antimonides by X-Ray Photoelectron and Absorption Spectroscopies

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