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Kostamovaara, J.

doi:10.1049/el.2010.9054

Electron. Lett.

2010

DOI: 10.1049/el.2010.9054

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J. Kostamovaara

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“…11 Very recently, Alomari et al reported the dc and small-signal rf characteristics of AlGaN/GaN HEMTs grown on diamond ͑111͒ substrates by molecular beam epitaxy. 12,13 In this study, using MOVPE, we epitaxially grew a single-crystal AlGaN/GaN heterostructure on a diamond ͑111͒ substrate. Next, we confirmed two-dimensional electron gas ͑2DEG͒.We then measured the dc, rf and thermal characteristics.…”

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AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Hirama

Taniyasu

Kasu

2011

Applied Physics Letters

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AlGaN/GaN heterostructures with a wurtzite structure were epitaxially grown on single-crystal diamond (111) with a diamond structure by metalorganic vapor phase epitaxy. In the AlGaN/GaN heterostructure, two-dimensional electron gas with sheet carrier density of 1.0×1013 cm−2 and mobility of 730 cm2/V s was obtained. The 3-μm-gate-length AlGaN/GaN high-electron mobility transistors (HEMTs) show maximum drain current of 220 mA/mm, cut-off frequency of 3 GHz, and maximum frequency of oscillation of 7 GHz. The thermal resistance of the AlGaN/GaN HEMTs on diamond substrates is 4.1 K mm/W, the lowest ever reported for AlGaN/GaN HEMTs, due to the high thermal conductivity of single-crystal diamond.

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confidence: 99%

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Hirama

Taniyasu

Kasu

2011

Applied Physics Letters

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Self-Assembled GaN Nanowires on Diamond

et al. 2012

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We demonstrate the nucleation of self-assembled, epitaxial GaN nanowires (NWs) on (111) single-crystalline diamond without using a catalyst or buffer layer. The NWs show an excellent crystalline quality of the wurtzite crystal structure with m-plane faceting, a low defect density, and axial growth along the c-axis with N-face polarity, as shown by aberration corrected annular bright-field scanning transmission electron microscopy. X-ray diffraction confirms single domain growth with an in-plane epitaxial relationship of (10 ̅10)(GaN) [parallel] (01 ̅1)(Diamond) as well as some biaxial tensile strain induced by thermal expansion mismatch. In photoluminescence, a strong and sharp excitonic emission reveals excellent optical properties superior to state-of-the-art GaN NWs on silicon substrates. In combination with the high-quality diamond/NW interface, confirmed by high-resolution transmission electron microscopy measurements, these results underline the potential of p-type diamond/n-type nitride heterojunctions for efficient UV optoelectronic devices.

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Interview

Cited by 2 publications

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AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Self-Assembled GaN Nanowires on Diamond

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