Intervalley splittings of Si quantum wells

Park, S. H.; Lee, Y. Y.; Ahn, Doyeol

doi:10.1063/1.2963693

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…8) Only the spin degeneracy is counted, since the valley degeneracy is expected to be lifted by high strain of 3D structures. 11) If there is a single mode per one channel, R CH ¼ ð4q 2 =hÞ À1 $ 6 k, since there are two physical channels in our device. Considering the high current drivability in MBCFET structure due to increased effective channel width, the measured R CH of 5 k is well comparable to a few modes.…”

Section: Resultsmentioning

confidence: 99%

Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors

Jung¹,

Hong²,

Choi³

et al. 2011

Jpn. J. Appl. Phys.

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Electrical characteristics of multi bridged channel field effect transistor (MBCFET) with various channel lengths (L) ranging from 500 to 48 nm have been investigated. The current–voltage characteristics do not show any sign of short channel effect due to surrounding gate structures. The gate bias power law of the drain saturation current, mobility, and ballistic efficiency as functions of L show mixed features of drift-diffusion and ballistic transport. The channel resistance shows anomalous decrease when L≤60 nm, which is related with the transconductance overshoot resulted in ballistic transport at small V DS. Temperature (T) dependence of the 100 nm device shows another type of transport region when T < 40 K, which can be interpreted as the one-dimensional quantum ballistic regime.

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Section: Resultsmentioning

confidence: 99%

Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors

Jung¹,

Hong²,

Choi³

et al. 2011

Jpn. J. Appl. Phys.

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Thirty-band k · p model for Si-based optoelectronics

Szczap

Cavassilas

Michelini

2010

2010 14th International Workshop on Computational Electronics

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We use a 30-band k·p model to investigate intervalley splittings and optical transitions inside the fine structure of conduction subbands in [001] Si quantum wells. Ground and first excited doublets generated in the wells exhibit decaying oscillations as a function of well width with same periodicity and opposite phase. A uniform electric field superimposed along the well axis produces a damping of oscillation amplitudes while period and phase remain unchanged. These oscillations depend on the location of the bulk conduction band minima along the X-directions, and hence are indirect gap signatures. Within the k · p framework, we analyse the thirty Bloch components and parity of the doublet wave functions. Such a study allows us to develop an analytical approach, using a two-band k · p model, which reproduces intervalley splittings with goog agreement. It furthermore gives the keys to elucidate intersubband optical transitions between the two doublets. Indeed, optical matrix shows clear selection rules with a uniaxial polarization along the well axis. Moreover, matrix elements also oscillate with same period and phase, above the result given by the standard effective mass approximation.

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Theoretical studies on intervalley splittings in Si/SiO2 quantum dot structures

Park

Ahn

2012

Eur. Phys. J. B

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Intervalley splittings of Si quantum wells

Abstract: Multi-valley effective mass theory for silicon quantum well structure is studied taking into account the external fields and the quantum interfaces. It is found that the phenomenological delta function potential, employed to explain the valley splitting

Cited by 4 publications

References 21 publications

Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors

Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors

Thirty-band k · p model for Si-based optoelectronics

Theoretical studies on intervalley splittings in Si/SiO2 quantum dot structures

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Intervalley splittings of Si quantum wells

Abstract: Multi-valley effective mass theory for silicon quantum well structure is studied taking into account the external fields and the quantum interfaces. It is found that the phenomenological delta function potential, employed to explain the valley splitting

Cited by 4 publications

References 21 publications

Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors

Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors

Thirty-band k &#x00B7; p model for Si-based optoelectronics

Theoretical studies on intervalley splittings in Si/SiO2 quantum dot structures

Contact Info

Product

Resources

About

Thirty-band k · p model for Si-based optoelectronics