2009
DOI: 10.1016/j.jallcom.2008.06.037
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Interrelationship between structural, optical, electronic and elastic properties of materials

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Cited by 109 publications
(57 citation statements)
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“…It can be seen, that my calculated values of bulk modulus, and microhardness of BAs semiconductor are slightly lower than other theoretical calculations [7], [29], [30], [31] and experimental result [32]. To study the correlation between the bulk modulus B and the energy gap Eg Reddy et al [23] proposed linear relationships. For several III-V, II-IV-V2 and I-III-VI2 group semiconductors, an important formula relates the bulk modulus B and the energy gap Eg was established, it is given as follow [23]:…”
Section: Bulk Modulus and Microhardnessmentioning
confidence: 76%
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“…It can be seen, that my calculated values of bulk modulus, and microhardness of BAs semiconductor are slightly lower than other theoretical calculations [7], [29], [30], [31] and experimental result [32]. To study the correlation between the bulk modulus B and the energy gap Eg Reddy et al [23] proposed linear relationships. For several III-V, II-IV-V2 and I-III-VI2 group semiconductors, an important formula relates the bulk modulus B and the energy gap Eg was established, it is given as follow [23]:…”
Section: Bulk Modulus and Microhardnessmentioning
confidence: 76%
“…The relevant values of C1 and C2 for III-V, II-IV-V2 and I-III-VI2 group semiconductors are: 13.89 and 46.90 respectively [23]. Using the experimental energy gap Eg = 1.46 eV reported by Chu and Hyslop [12], [13] of BAs material, the value of the bulk modulus B is found to be 67.18 GPa.…”
Section: Bulk Modulus and Microhardnessmentioning
confidence: 82%
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