Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-½ nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate the importance of this relaxation mechanism. Master equations for the electron spin density matrix are derived and solved. Polarized nuclear spins can be used to polarize the electrons in spintronic devices. Experimental work towards implementations of this proposal has been reported recently [3,4].A review of and list of references to the latest achievements in spintronics can be found in [5].Once injected into a semiconductor, electrons experience spin-dependent interactions with the environment, which can cause relaxation. Various relaxation mechanisms of the electron-spin state can result owing to coupling to phonons, magnetic and nonmagnetic impurities, nuclear spins, spins of other electrons [6], etc.; these mechanisms are due to the magnetic and spin-orbit interactions [7,8]. It is important to identify the primary mechanisms of relaxation for a particular system and evaluate how they limit the spin phase coherence.The main mechanisms of relaxation can be different for bounded and conduction electrons. Several recent works have identified the electron-nuclear spin relaxation mechanism as dominant at low temperatures, for electrons bounded in semiconductor quantum dots [9][10][11][12][13] or at donor impurities [13,14]. Three dominant spin-relaxation mechanisms for conduction electrons were suggested [15][16][17][18] and confirmed experimentally