2012
DOI: 10.1103/physrevb.85.165450
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Interplay of bulk and edge states in transport of two-dimensional topological insulators

Abstract: We study transport in two-terminal metal/quantum spin-Hall insulator (QSHI)/metal junctions. We show that the conductance signals originating from the bulk and the edge contributions are not additive. While for a long junction the transport is determined by the edge states contribution, for a short junction, the conductance signal is built from both bulk and edge states in the ratio which depends on the width of the sample. Further, in the topological insulator regime the conductance for short junctions shows … Show more

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Cited by 14 publications
(15 citation statements)
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References 35 publications
(55 reference statements)
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“…4. At the definite values of the Fermi energy E F and aspect ratio W/L the transmission of the lowest modes through the insulating (or slightly doped) region is resonantly enhanced as a consequence of an effectively propagating solution [41]. This leads to the well pronounced maximum of the differential conductance of the NIS structure for the corresponding values of E F and W/L, in accordance with Eq.…”
Section: Differential Conductance From a Scattering Matrix Approachsupporting
confidence: 81%
“…4. At the definite values of the Fermi energy E F and aspect ratio W/L the transmission of the lowest modes through the insulating (or slightly doped) region is resonantly enhanced as a consequence of an effectively propagating solution [41]. This leads to the well pronounced maximum of the differential conductance of the NIS structure for the corresponding values of E F and W/L, in accordance with Eq.…”
Section: Differential Conductance From a Scattering Matrix Approachsupporting
confidence: 81%
“…Following the experimental demonstration of the QSH effect in HgTe-based QWs, much effort has been invested in the theoretical investigation of the properties of 2D topological insulators, their helical edge states, and possible applications. [26][27][28][29][30][31][32][33][34] At the heart of the QSH state are relativistic corrections, which can-if strong enoughresult in band inversion, 35,36 that is, a situation where the normal order of the conduction and valence bands is inverted and which can lead to peculiar effects such as the formation of interface states. [37][38][39] In HgTe/CdTe QWs, the band structure of the 2D system formed in the well is inverted if the thickness d of the HgTe QW exceeds the critical thickness d c ≈ 6.3 nm, whereas the band structure is normal for d < d c .…”
Section: Introductionmentioning
confidence: 99%
“…5 to account for additional spin-orbit terms due to out-of-plane inversion breaking in HgTe quantum wells 25 as well as studies on how helical edge states and bulk states interact in two-dimensional topological insulators. 26 The effect of magnetic fields on transport in inverted HgTe quantum wells has been treated in Refs. [27][28][29].…”
Section: Introductionmentioning
confidence: 99%