Interplay between structural deformations and flat band phenomenology in twisted bilayer antimonene

Souza, Alan C.R.; Matos, Matheus J. S.; Mazzoni, Mário S. C.

doi:10.1039/d1ra05301a

Cited by 4 publications

(5 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…states, [12,13] and flat bands. [14,15] Few-layers antimonene is also predicted to exhibit fruitful strain effects, such as a band gap modulation induced by inter-layer compression, [11] and the quantum spin Hall state induced by in-plane strain. [16][17][18] Thus, spiral antimonene is a proper candidate for studying the strain effects on spirals.…”

Section: Introductionmentioning

confidence: 99%

“…Two‐dimensional (2D) van der Waals (vdW) layered materials are widely studied in the past two decades. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ] These materials are vdW stackings of atomic layers of 2D covalently bonded materials, and their electronic property significantly relies on the inter‐layer coupling. A certain setting of the inter‐layer coupling or stacking order in such materials may emerge exotic physical properties.…”

Section: Introductionmentioning

confidence: 99%

“…[ 10 ] Exotic properties were observed in different antimonene stacking layers, such as semiconductor‐semimetal transitions, [ 10 , 11 ] topological surface states, [ 12 , 13 ] and flat bands. [ 14 , 15 ] Few‐layers antimonene is also predicted to exhibit fruitful strain effects, such as a band gap modulation induced by inter‐layer compression, [ 11 ] and the quantum spin Hall state induced by in‐plane strain. [ 16 , 17 , 18 ] Thus, spiral antimonene is a proper candidate for studying the strain effects on spirals.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Strain Effects in Twisted Spiral Antimonene

Huang

Chang

et al. 2023

Advanced Science

View full text Add to dashboard Cite

Van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures, and a tremendous variation in their physical properties can be deduced from a tiny change in inter‐layer spacing, twist angle, or in‐plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain effects in the material are studied. The spiral antimonene is grown on a germanium (Ge) substrate and is induced by a helical dislocation penetrating through few atomic‐layers of antimonene (β‐phase). The as‐grown spiral is intrinsically strained, and the lattice distortion is found to be pinned around the dislocation. Both spontaneous inter‐layer twist and in‐plane anisotropic strain are observed in scanning tunneling microscope (STM) measurements. The strain in the spiral antimonene can be significantly modified by STM tip interaction, leading to a variation in the surface electronic density of states (DOS) and a large modification in the work function of up to a few hundreds of millielectron‐volts (meV). Those strain effects are expected to have potential applications in building up novel piezoelectric devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Strain Effects in Twisted Spiral Antimonene

Huang

Chang

et al. 2023

Advanced Science

View full text Add to dashboard Cite

show abstract

“…[28][29][30] To date, the band structures of the β-P, β-As, and β-Sb twisted systems have also been explored by density functional theory (DFT) methods. [31][32][33][34] An et al found that the flat bandwidth of 10 meV in β-Sb appeared at 6.01 ○ . 34 Agnihotri et al studied the evolution of interlayer coupling in twisted bilayers of β-P and β-As, resulting in significant changes in the bandgap.…”

mentioning

confidence: 99%

“…We can find that a, r, and h are in good agreement with the previous study. 31,33,49,50 However, the interlayer distance differs by ∼6%, 33,[50][51][52] which can be sourced from the different methods used to treat vdW interaction. In this study, the DFT-D3 method with Becke Jonson damping is used, which is distinguished from the previous study.…”

mentioning

confidence: 99%

Ultra-flat bands at large twist angles in group-V twisted bilayer materials

Que,

Li,

Huang

et al. 2024

The Journal of Chemical Physics

View full text Add to dashboard Cite

Flat bands in 2D twisted materials are key to the realization of correlation-related exotic phenomena. However, a flat band often was achieved in the large system with a very small twist angle, which enormously increases the computational and experimental complexity. In this work, we proposed group-V twisted bilayer materials, including P, As, and Sb in the β phase with large twist angles. The band structure of twisted bilayer materials up to 2524 atoms has been investigated by a deep learning method DeepH, which significantly reduces the computational time. Our results show that the bandgap and the flat bandwidth of twisted bilayer β-P, β-As, and β-Sb reduce gradually with the decreasing of twist angle, and the ultra-flat band with bandwidth approaching 0 eV is achieved. Interestingly, we found that a twist angle of 9.43° is sufficient to achieve the band flatness for β-As comparable to that of twist bilayer graphene at the magic angle of 1.08°. Moreover, we also find that the bandgap reduces with decreasing interlayer distance while the flat band is still preserved, which suggests interlayer distance as an effective routine to tune the bandgap of flat band systems. Our research provides a feasible platform for exploring physical phenomena related to flat bands in twisted layered 2D materials.

show abstract