2002
DOI: 10.1016/s0038-1098(01)00480-x
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Interplay between direct gap renormalization and intervalley scattering in AlxGa1−xAs near the Γ–X crossover

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“…Following the intervalley scattering investigations performed in GaAs and other semiconductors using the picosecond and femtosecond optical spectroscopic techniques, [6][7][8][9][10][11][12][13][14] there are two main ways for initiating intervalley transitions in time-resolved experiments. One method is to excite electrons from the bottom of the conduction ⌫ band to upper energy states with below-band-gap infrared femtosecond op-tical pulses via free-carrier absorption and use the aboveband-gap UV femtosecond probe beam to monitor changes in electron cooling behavior with and without the intervalley scattering.…”
Section: Introductionmentioning
confidence: 99%
“…Following the intervalley scattering investigations performed in GaAs and other semiconductors using the picosecond and femtosecond optical spectroscopic techniques, [6][7][8][9][10][11][12][13][14] there are two main ways for initiating intervalley transitions in time-resolved experiments. One method is to excite electrons from the bottom of the conduction ⌫ band to upper energy states with below-band-gap infrared femtosecond op-tical pulses via free-carrier absorption and use the aboveband-gap UV femtosecond probe beam to monitor changes in electron cooling behavior with and without the intervalley scattering.…”
Section: Introductionmentioning
confidence: 99%