2018
DOI: 10.1021/acs.jpcc.8b06124
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Interplay between Defects and Cation Nonstoichiometry in Lithium-Substituted CdGa2O4 Leading to Multifunctional Behavior

Abstract: Stoichiometric and nonstoichiometric cadmium gallate (gallium-rich) samples have been synthesized by a modified epoxide gel method. Cubic spinel arrangement was inferred for stoichiometric and gallium-rich compositions from powder X-ray diffraction analysis. Complete structural analysis employing Raman spectroscopy has been carried out to find the intricate differences between these two samples. Additional evidence for the cubic symmetry and elemental ratio of these samples has been gathered using microscopy t… Show more

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Cited by 8 publications
(5 citation statements)
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References 53 publications
(96 reference statements)
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“…This would lead ultimately to higher dielectric permittivity value. 37 One of the major applications of oxides with fluorite and fluorite-derived structures has been in the area of catalysis. While a major thrust has been centered on the use of fluoritestructured oxides as oxidation catalyst, their capability to promote reduction reactions, preferably organic substrates, has not yet been explored extensively.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…This would lead ultimately to higher dielectric permittivity value. 37 One of the major applications of oxides with fluorite and fluorite-derived structures has been in the area of catalysis. While a major thrust has been centered on the use of fluoritestructured oxides as oxidation catalyst, their capability to promote reduction reactions, preferably organic substrates, has not yet been explored extensively.…”
Section: Resultsmentioning
confidence: 99%
“…With increase in temperature, the oxygen vacancies could be thermally “ionized”, and their conduction would become dominant due to their mobility, higher vacancy concentration, and higher inertia of oxygen ions. This would lead ultimately to higher dielectric permittivity value …”
Section: Results and Discussionmentioning
confidence: 99%
“…However, Si 4+ ions occupy the tetrahedral sites (Zn sites) in ZnGa 2 O 4 in priority, which leads to the appearance of Ga vacancy with three negative charges and Si 4+ in Zn sites with two positive charges. These defects contribute to the electron traps with a deeper depth more than ~1.0 eV [28,38,39], where the captured electrons cannot easily escape at room temperature and thus contributes to the worse NIR persistent luminescence. Therefore, the most intense and the longest persistent luminescence was observed for x = 0.05 sample, which are the comprehensive outcome from the anti-defects and the defects arising from Si 4+ ions occupying the tetrahedral sites.…”
Section: Effects Of Mg 2+ /Si 4+ Doping On the Nir Persistent Lumines...mentioning
confidence: 99%
“…With increase in temperature, the oxygen vacancies could be thermally "ionized", their conduction would become dominant due to their mobility, higher vacancy concentration and higher inertia of oxygen ions. This would lead ultimately to higher dielectric permittivity value [19]. So, the high dielectric permittivity of doped samples is due to crystal imperfections formed by doping [20].…”
Section: Dielectric Propertiesmentioning
confidence: 99%
“…The calculated value of activation energy in the current system might be due to doubly ionized oxygen vacancies. The singly and doubly ionized oxygen vacancies can be calculated according to the following mechanism [19].…”
Section: Dielectric Propertiesmentioning
confidence: 99%